SSM3J321T(TE85L,F)

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The SSM3J321T(TE85L,F) FET, manufactured by Siliconix, is a versatile, high-performance, surface-mount device. It is a single polarity depletion-type MOSFET, with an N-channel structure, designed for a wide range of high frequency switching and linear applications. The device can handle a wide range of voltages and currents, making it suitable for a variety of applications, including DC-DC converters, digital logic control, power oscillators, and rf switching.

The device contains two separate closely matched N-channel depletion-type FETs, each with its own gate, source, and drain terminals, which allows it to behave more like two separate independent transistors when operated in parallel. This makes it ideal for use in dual gate operation and switching circuits. The structure of the device also helps to reduce crosstalk between the two devices.

The gate voltage range is from -3V to -30V, and the drain current range is from 5A to 15A. It is rated for a maximum drain-to-source voltage of 600V and drain-to-source on state resistance of 2Ω. The maximum junction temperature is 125°C, making it suitable for use in even the most demanding applications. It is also ESD rated for up to 2kV Human Body Model.

The basic operation of the device is similar to that of a standard MOSFET. The gate terminal is connected to the drain terminal, and the source terminal is connected to ground. When a negative gate voltage is applied, it creates a depletion region in the channel between the drain and source, allowing current to pass through. The amount of current that can flow depends on the magnitude of the gate voltage and the drain-to-source voltage. A higher gate voltage will increase the current, while a lower gate voltage will reduce it.

The device can be used in forward and reverse mode of operations. In forward mode, the gate voltage is applied, resulting in increased current flow through the channel. In reverse mode, the source-gate voltage is applied, resulting in reduced current flow through the channel. The device can also be used in switched mode operation, which is essentially a combination of both forward and reverse modes. The device has very low on-state resistance in both modes, making it ideal for use in high frequency switching applications.

In addition to its high frequency switching capabilities, the SSM3J321T(TE85L,F) can also be used for linear applications such as capacitor charging and discharging, current limiting, voltage regulation, and power switching.

The SSM3J321T(TE85L,F) is a versatile and high-performance device, suitable for a variety of applications. It has a wide range of gate and drain voltages, and a maximum drain-to-source voltage of 600V, allowing it to be used in a variety of demanding applications. It is also ESD rated for up to 2kV Human Body Model. The device can be used in both forward and reverse mode, providing high frequency switching capabilities as well as linear applications. Its low on-state resistance makes it ideal for high frequency switching applications.

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