Storage interface codec - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SA1930(ONKQM)- ND	2SA1930(ONK,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC5171(ONKQM)- ND	2SC5171(ONK,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC5171Q(J-ND	2SC5171,Q(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
TBAT54SLMTR-ND	TBAT54S,LM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io) (per Diode): 200mA Voltage - Forward (Vf) (Max) @ If: 580mV @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 1.5ns Current - Reverse Leakage @ Vr: 2A @ 25V Operating Temperature - Junction: -55C ~ 150C Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: SOT-23-3	30000 Order	3000+: $0.0236 6000+: $0.0213 15000+: $0.0185 30000+: $0.0167 75000+: $0.0148 150000+: $0.0123
TPC8042TE12LQMT R-ND	TPC8042(TE12L,Q ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 3.4 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 56nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2900pF @ 10V Power Dissipation (Max): 1W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP (5.5x6.0) Package / Case: 8-SOIC (0.173", 4.40mm Width)	1000 Order	1+: $0
CBS05F30L3FTR-N D	CBS05F30,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 500mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 118pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-882 Supplier Device Package: CST2B Operating Temperature - Junction: 125C (Max)	20000 Order	10000+: $0.0633 30000+: $0.0582
CRS15I30B(TE85L QM-ND	CRS15I30B(TE85L ,QM	Toshiba Semiconductor and Storage	View more Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1.5A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 100A @ 30V Capacitance @ Vr, F: 82pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.083
1SS301SULFTR-ND	1SS301SU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 4ns Current - Reverse Leakage @ Vr: 500nA @ 80V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70 Base Part Number: 1SS301	1000 Order	1+: $0
TLP5771(TPETR-N D	TLP5771(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 35kV/s Propagation Delay tpLH / tpHL (Max): 150ns, 150ns Pulse Width Distortion (Max): 50ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 1A, 1A Current - Peak Output: 1A Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 8mA Voltage - Supply: 10 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO Approvals: CQC, cUR, UR, VDE	1500 Order	1500+: $0.6194 3000+: $0.5856 7500+: $0.5631 10500+: $0.5518
TLP2601F-ND	TLP2601(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 2500Vrms Common Mode Transient Immunity (Min): 1kV/s Input Type: DC Output Type: Open Collector, Schottky Clamped Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 30ns, 30ns Voltage - Forward (Vf) (Typ): 1.65V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 4.5 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	1000 Order	50+: $0.8143
TC75W70L8XLFTR- ND	TC75W70L8X,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: General Purpose Number of Elements: 2 Output Type: Push-Pull Voltage - Supply, Single/Dual (): 1.3 V ~ 5.5 V Voltage - Input Offset (Max): 6mV @ 3V Current - Input Bias (Max): 1pA @ 3V Current - Output (Typ): 18mA @ 3V Current - Quiescent (Max): 47A Propagation Delay (Max): 800ns Operating Temperature: -40C ~ 85C Package / Case: 8-UFQFN Exposed Pad Mounting Type: Surface Mount Supplier Device Package: SOT-902	1000 Order	1+: $0
SSM6J507NULFTR- ND	SSM6J507NU,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 10A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V Vgs(th) (Max) @ Id: 2.2V @ 250A Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V Vgs (Max): +20V, -25V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V Power Dissipation (Max): 1.25W (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 6-UDFNB (2x2) Package / Case: 6-WDFN Exposed Pad	42000 Order	3000+: $0.1123
SSM3K56FSLFTR-N D	SSM3K56FS,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 800mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 235 mOhm @ 800mA, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 55pF @ 10V Power Dissipation (Max): 150mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: SSM Package / Case: SC-75, SOT-416	15000 Order	3000+: $0.0478
RN2119MFV(TPL3) TR-ND	RN2119MFV(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 1 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM Base Part Number: RN211*	1000 Order	1+: $0
2SK3078A(TE12LF )CT-ND	2SK3078A(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: N-Channel Frequency: 470MHz Gain: 8dB Voltage - Test: 4.5V Current Rating: 500mA Current - Test: 50mA Power - Output: 28dbm Voltage - Rated: 10V Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
2SC5086-OLFTR-N D	2SC5086-O,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0538 6000+: $0.0511 15000+: $0.049 30000+: $0.0477 75000+: $0.0461
RN1103MFV(TPL3) -ND	RN1103MFV(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM Base Part Number: RN110*	1000 Order	8000+: $0.0278
HN1C01F-GR(TE85 LFCT-ND	HN1C01F-GR(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 800MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	63 Order	1+: $0.2583 10+: $0.184 25+: $0.1431
SSM6J212FELFTR- ND	SSM6J212FE,LF	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 40.7 mOhm @ 3A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 14.1nC @ 4.5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 970pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: ES6 Package / Case: SOT-563, SOT-666	1000 Order	4000+: $0.1123
TPC6111(TE85LFM )TR-ND	TPC6111(TE85L,F ,M)	Toshiba Semiconductor and Storage	View more Series: U-MOSV Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 5.5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Rds On (Max) @ Id, Vgs: 40 mOhm @ 2.8A, 4.5V Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 10nC @ 5V Vgs (Max): 8V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 10V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: VS-6 (2.9x2.8) Package / Case: SOT-23-6 Thin, TSOT-23-6	1000 Order	3000+: $0.1628
TK62J60WS1VQ-ND	TK62J60W,S1VQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 61.8A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 38 mOhm @ 30.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 3.1mA Gate Charge (Qg) (Max) @ Vgs: 180nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 6500pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 400W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	86 Order	1+: $10.7604 25+: $9.0473 100+: $8.3137
SSM3J306T(TE85L F)TR-ND	SSM3J306T(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 2.4A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 117 mOhm @ 1A, 10V Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 15V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 280pF @ 15V Power Dissipation (Max): 700mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: TSM Package / Case: TO-236-3, SC-59, SOT-23-3	1000 Order	1+: $0
2SC2229-O(TE6FM )-ND	2SC2229-O(TE6,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2229-Y(SAN2F M-ND	2SC2229-Y(SAN2, F,M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC2235-YT6F(J- ND	2SC2235-Y,T6F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SC5201(TE6FM)- ND	2SC5201(TE6,F,M )	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 600V Vce Saturation (Max) @ Ib, Ic: 1V @ 500mA, 20mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 20mA, 5V Power - Max: 900mW Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TTC009F(M-ND	TTC009,F(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 3A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 500mA, 5V Power - Max: 2W Frequency - Transition: 150MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SK3565QM-ND	2SK3565(Q,M)	Toshiba Semiconductor and Storage	View more Series: -MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 5A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 2.5 Ohm @ 3A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
SSM3K106TU(TE85 L)TR-ND	SSM3K106TU(TE85 L)	Toshiba Semiconductor and Storage	View more Series: -MOSVI Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 1.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 310 mOhm @ 600mA, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 36pF @ 10V Power Dissipation (Max): 500mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	1+: $0
1SS307EL3FTR-ND	1SS307E,L3F	Toshiba Semiconductor and Storage	View more Series: Automotive, AEC-Q101 Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 80V Current - Average Rectified (Io): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Current - Reverse Leakage @ Vr: 10nA @ 80V Capacitance @ Vr, F: 6pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-79, SOD-523 Supplier Device Package: SC-79 Operating Temperature - Junction: 150C (Max)	1000 Order	8000+: $0.0198 16000+: $0.0172 24000+: $0.0155 56000+: $0.0138 200000+: $0.0115
TC7SP3125TULFTR -ND	TC7SP3125TU,LF	Toshiba Semiconductor and Storage	View more Series: TC7SP Packaging: Tape & Reel (TR) Part Status: Obsolete Translator Type: Voltage Level Channel Type: Unidirectional Number of Circuits: 1 Channels per Circuit: 1 Voltage - VCCA: 1.1V ~ 2.7V Voltage - VCCB: 1.65V ~ 3.6V Output Type: Tri-State, Non-Inverted Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 6-SMD, Flat Leads Supplier Device Package: UF6	1000 Order	1+: $0
TC7SET14FLFCT-N D	TC7SET14F,LF	Toshiba Semiconductor and Storage	View more Series: TC7SET Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 2A Current - Output High, Low: 8mA, 8mA Logic Level - Low: 0.5 V ~ 0.6 V Logic Level - High: 1.9 V ~ 2.1 V Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753	648 Order	1+: $0.3024 10+: $0.2161 25+: $0.1681 100+: $0.1273 250+: $0.09 500+: $0.072
TC4S584FLFTR-ND	TC4S584F,LF	Toshiba Semiconductor and Storage	View more Series: TC4S Packaging: Tape & Reel (TR) Part Status: Active Logic Type: Inverter Number of Circuits: 1 Number of Inputs: 1 Features: Schmitt Trigger Voltage - Supply: 3 V ~ 18 V Current - Quiescent (Max): 4A Current - Output High, Low: 3.4mA, 3.4mA Logic Level - Low: 1.1 V ~ 3.3 V Logic Level - High: 3.35 V ~ 10.6 V Max Propagation Delay @ V, Max CL: 120ns @ 15V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Supplier Device Package: SMV Package / Case: SC-74A, SOT-753 Base Part Number: 4S584	1000 Order	3000+: $0.051 6000+: $0.0482 15000+: $0.0439 30000+: $0.0411 75000+: $0.0369 150000+: $0.0354
TC74ACT02P-ND	TC74ACT02P	Toshiba Semiconductor and Storage	View more Series: TC74ACT Packaging: Tube Part Status: Obsolete Logic Type: NOR Gate Number of Circuits: 4 Number of Inputs: 2 Voltage - Supply: 4.5 V ~ 5.5 V Current - Quiescent (Max): 4A Current - Output High, Low: 24mA, 24mA Logic Level - Low: 0.8V Logic Level - High: 2V Max Propagation Delay @ V, Max CL: 8.3ns @ 5V, 50pF Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Supplier Device Package: 14-DIP Package / Case: 14-DIP (0.300", 7.62mm) Base Part Number: 74ACT02	1000 Order	1+: $0
TC7WH241FUTE12L FTR-ND	TC7WH241FUTE12L F	Toshiba Semiconductor and Storage	View more Series: TC7WH Packaging: Tape & Reel (TR) Part Status: Obsolete Logic Type: Buffer, Non-Inverting Number of Elements: 2 Number of Bits per Element: 1 Output Type: 3-State Current - Output High, Low: 8mA, 8mA Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: SM8 Base Part Number: 7WH241	1000 Order	1+: $0
74HC4052DTR-ND	74HC4052D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 130 Ohm Channel-to-Channel Matching (Ron): 4 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Switch Time (Ton, Toff) (Max): 34ns, 32ns Channel Capacitance (CS(off), CD(off)): 10pF Current - Leakage (IS(off)) (Max): 1A Crosstalk: -50dB @ 1MHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	5000 Order	--
TC4W53FUTE12LFC T-ND	TC4W53FUTE12LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Discontinued at Digi-Key Moisture Sensitivity Level (MSL): 1 (Unlimited) Number of Channels: 2 On-State Resistance (Max): 160 Ohm Voltage - Supply, Single (V+): 3 V ~ 18 V Operating Temperature: -40C ~ 85C (TA) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Supplier Device Package: 8-SSOP Base Part Number: 4W53	1000 Order	--
TL1F2-DW0LTR-ND	TL1F2-DW0,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 6500K Flux @ 25C, Current - Test: 133 lm (120 lm ~ 145 lm) Current - Test: 350mA Voltage - Forward (Vf) (Typ): 2.85V Lumens/Watt @ Current - Test: 133 lm/W CRI (Color Rendering Index): 70 Current - Max: 550mA Viewing Angle: 120 Mounting Type: Surface Mount Package / Case: 2020 (5050 Metric) Supplier Device Package: 6450 Size / Dimension: 0.197" L x 0.197" W (5.00mm x 5.00mm) Height - Seated (Max): 0.057" (1.45mm) Thermal Resistance of Package: 8C/W	1000 Order	1+: $0
TLP3107(F-ND	TLP3107(F	Toshiba Semiconductor and Storage	View more Series: TLP3100 Packaging: Tube Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 60V Load Current: 3.3A On-State Resistance (Max): 60 mOhms Termination Style: Gull Wing Package / Case: 6-SOP (0.173", 4.40mm) Supplier Device Package: 6-SOP (2.54mm)	1000 Order	75+: $1.4824
TCR2EF15LM(CTTR -ND	TCR2EF15,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1.5V Voltage Dropout (Max): 0.39V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	3000 Order	3000+: $0.0378 6000+: $0.034 15000+: $0.0302 30000+: $0.0284 75000+: $0.0251 150000+: $0.0242

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