Allicdata Part #: | 2SC5086-OLFTR-ND |
Manufacturer Part#: |
2SC5086-O,LF |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS RF NPN 12V 1MHZ SSM |
More Detail: | RF Transistor NPN 12V 80mA 7GHz 100mW Surface Moun... |
DataSheet: | 2SC5086-O,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.05380 |
6000 +: | $ 0.05111 |
15000 +: | $ 0.04900 |
30000 +: | $ 0.04765 |
75000 +: | $ 0.04612 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1dB @ 500MHz |
Gain: | -- |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | SSM |
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2SC5086-O,LF Application Field and Working Principle
The 2SC5086-O,LF is a bipolar junction transistor (BJT) designed for use in RF applications, specifically RF amplifiers. It is a three-terminal, NPN-type device with an epitaxial construction. This device is produced using silicon epitaxial planar technology for the Collector, Base and Emitter with a built-in bias voltage oscillator, allowing operation from dc voltages up to 400 V.
Characteristics of the 2SC5086-O,LF
The 2SC5086-O,LF has a maximum collector current of 120 mA, with minimal collector-emitter saturation voltage of 75 mV. It has a maximum collector-emitter voltage of 400V and a maximum power dissipation of 1 W. It has a frequency range of 10 kHz-25 MHz when used as an RF amplifier, and it is capable of operating up to 125°C. The device also has a self-bias oscillator which requires no external components and can operate up to 400V.
Applications of the 2SC5086-O,LF
The 2SC5086-O,LF is typically used in RF amplifier designs, with applications including broadband wire line amplifiers and low noise amplifiers in TV tuners, signal detectors and signal controlled switches or amplifiers. It is also used in linear amplifier designs where its built in bias voltage oscillator feature allows for an optimal bias point.
Working principle of the 2SC5086-O,LF
The 2SC5086-O,LF works based on the principle of a bipolar junction transistor. Bipolar junction transistors are three terminal devices composed of two PN junctions connected in series, one of which is used as a base and the other as an emitter. The two junctions are connected at a common point, making up the third terminal, the collector. The current flows from the emitter to the collector when a voltage is applied to the base, resulting in current amplification. In the case of the 2SC5086-O,LF, the built in bias voltage oscillator provides an optimal bias point for optimal performance in RF amplifier designs.
Conclusion
The 2SC5086-O,LF is a three-terminal, NPN-type BJT designed for use in RF amplifier designs. It is the perfect choice for applications such as broadband wire line amplifiers, low noise amplifiers in TV tuners, signal detectors and signal controlled switches or amplifiers. Its built-in bias voltage oscillator allows for improved operation as its bias point is optimised. The 2SC5086-O,LF is a highly reliable and effective device for use in RF applications.
The specific data is subject to PDF, and the above content is for reference
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