2SC2229-Y(SAN2,F,M Allicdata Electronics
Allicdata Part #:

2SC2229-Y(SAN2FM-ND

Manufacturer Part#:

2SC2229-Y(SAN2,F,M

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN 50MA 150V TO226-3
More Detail: Bipolar (BJT) Transistor NPN 150V 50mA 120MHz 800m...
DataSheet: 2SC2229-Y(SAN2,F,M datasheet2SC2229-Y(SAN2,F,M Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Bulk 
Part Status: Obsolete
Transistor Type: NPN
Current - Collector (Ic) (Max): 50mA
Voltage - Collector Emitter Breakdown (Max): 150V
Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Power - Max: 800mW
Frequency - Transition: 120MHz
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body
Supplier Device Package: TO-92MOD
Description

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The 2SC2229-Y is a type of transistor, also known as a bipolar junction transistor (BJT). It belongs to the classification of single version and is identified by its three-letter code; SAN2,F,M. It has a maximum collector-base voltage rating of 60V and has a maximum collector-emitter voltage rating of 50V. It can also handle an emitter-base-voltage of 6V. It has a rated continuous collector current of 0.2A, with a maximum peak collector current of 1.35A. Lastly, its DC collector-emitter saturation voltage is VCE(sat) = 0.15 V (max) @ IC = 0.2A.

This type of transistor has a variety of applications, including voltage regulation, amplifier circuit, signal switching, signal modulation, signal amplification, and engine speed control. Most commonly, it is used in signal processing and electronic control systems. Its versatility and durability make it a routine choice for industrial, automotive, and consumer electronic applications.

The principle of operation for the 2SC2229-Y transistor can be explained by how the base-emitter junction is constructed. In simple terms, an electric current coming in on the emitter, causes the current flowing through it to be multiplied before leaving the collector. The gain or "h FE" of the transistor is determined by the current flowing in at the base and the internal structure of the transistor. The gain or "h FE" also determines the amount of current going out at the collector.

The majority of transistors will have their gain or "h FE" printed on the datasheet and is used to calculate the amount of current flowing out and in at the collector and emitter. This will tell us how much current is flowing out or in at the collector for a given voltage on the base. Consequently, the operating points are determined by these characteristics and you can specify the desired gain for a particular application.

The 2SC2229-Y can also be used as a switch and can be used to turn a load on or off. It works by switching from a low current collector voltage (when in the OFF state) to a high collector voltage (when in the ON state). The amount of current it can handle depends on the gain of the transistor, but it can take up to a few amperes, making it suitable for most switching applications.

In conclusion, the 2SC2229-Y is a type of single bipolar junction transistor (BJT) commonly used in signal processing and electronic control applications. Its versatility and durability make it a good choice. The principle of operation is based on how the base-emitter junction is constructed and the gain or "h FE" of the transistor is determined by the current coming in at the base and the internal structure of the transistor. The 2SC2229-Y transistor is also suitable for use as a switch and can handle up to a few amperes.

The specific data is subject to PDF, and the above content is for reference

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