Allicdata Part #: | TPC6111(TE85LFM)TR-ND |
Manufacturer Part#: |
TPC6111(TE85L,F,M) |
Price: | $ 0.18 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | MOSFET P-CH 20V 5.5A VS-6 |
More Detail: | P-Channel 20V 5.5A (Ta) 700mW (Ta) Surface Mount V... |
DataSheet: | TPC6111(TE85L,F,M) Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.16283 |
Vgs(th) (Max) @ Id: | 1V @ 1mA |
Package / Case: | SOT-23-6 Thin, TSOT-23-6 |
Supplier Device Package: | VS-6 (2.9x2.8) |
Mounting Type: | Surface Mount |
Operating Temperature: | 150°C (TJ) |
Power Dissipation (Max): | 700mW (Ta) |
FET Feature: | -- |
Input Capacitance (Ciss) (Max) @ Vds: | 700pF @ 10V |
Vgs (Max): | ±8V |
Gate Charge (Qg) (Max) @ Vgs: | 10nC @ 5V |
Series: | U-MOSV |
Rds On (Max) @ Id, Vgs: | 40 mOhm @ 2.8A, 4.5V |
Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
Current - Continuous Drain (Id) @ 25°C: | 5.5A (Ta) |
Drain to Source Voltage (Vdss): | 20V |
Technology: | MOSFET (Metal Oxide) |
FET Type: | P-Channel |
Part Status: | Active |
Packaging: | Tape & Reel (TR) |
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The TPC6111 (TE85L, F, M) is a single transistor with a Field Effect designed to be used for low voltage and single-channel low power applications. It is a small-signal transistor, meaning it has a very low gate-source capacitance, which makes it a good choice for applications requiring a fast switching speed and low power loss. Its main application fields are low-voltage and low-power radio frequency (RF) switching, data acquisition and communications, as well as audio amplification.
As a field-effect transistor (FET), the TPC6111 works by controlling current through the semiconductor material between the source and the drain, based on the amount of biasing (charge or potential) applied to the gate. That is, when a positive biasing is applied to the gate, a positive "gate-source voltage" is created and this voltage remains fixed until the bias is removed. At this point, the current from the drain to the source is dependent on the biasing voltage applied to the gate and the type of FET used.
The TPC6111 is specially designed for low voltage and single-channel low power applications. It is a small-signal transistor, meaning it has a very low gate-source capacitance, which makes it a good choice for applications requiring a fast switching speed and low power loss. The TPC6111 is available in N-channel, E-channel and MOSFET versions. It features a noise figure optimized for low-noise performance, as well as a wide operating frequency range and extremely high gain. Other features include a temperature compensation pin, a low output impedance, and a high-speed switch-over.
The N-channel version of the TPC6111 is especially suitable for low-side switching applications, while the E-channel version is optimized for high-side switching applications. The MOSFET version of the transistor is configured with an integrated gate resistor, which provides protection against gate-source overvoltage and allows the MOSFET to operate at higher voltages and currents than other types of FETs. Additionally, the MOSFET version of the TPC6111 features on-chip buffering, allowing for a higher switching speed than other types of FETs.
In summary, the TPC6111 is a single transistor with a Field Effect specifically designed for low voltage and single-channel low power applications. Its main application fields are low-voltage and low-power radio frequency (RF) switching, data acquisition, communications and audio amplification. The TPC6111 is available in N-channel, E-channel and MOSFET versions, each engineered specifically for the applications it is designed for.
The specific data is subject to PDF, and the above content is for reference
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