SSM3K56FS,LF Discrete Semiconductor Products |
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| Allicdata Part #: | SSM3K56FSLFTR-ND |
| Manufacturer Part#: |
SSM3K56FS,LF |
| Price: | $ 0.06 |
| Product Category: | Discrete Semiconductor Products |
| Manufacturer: | Toshiba Semiconductor and Storage |
| Short Description: | MOSFET N-CH 20V 0.8A SSM |
| More Detail: | N-Channel 20V 800mA (Ta) 150mW (Ta) Surface Mount ... |
| DataSheet: | SSM3K56FS,LF Datasheet/PDF |
| Quantity: | 15000 |
| 3000 +: | $ 0.04782 |
| Vgs(th) (Max) @ Id: | 1V @ 1mA |
| Package / Case: | SC-75, SOT-416 |
| Supplier Device Package: | SSM |
| Mounting Type: | Surface Mount |
| Operating Temperature: | 150°C (TJ) |
| Power Dissipation (Max): | 150mW (Ta) |
| FET Feature: | -- |
| Input Capacitance (Ciss) (Max) @ Vds: | 55pF @ 10V |
| Vgs (Max): | ±8V |
| Gate Charge (Qg) (Max) @ Vgs: | 1nC @ 4.5V |
| Series: | U-MOSVII-H |
| Rds On (Max) @ Id, Vgs: | 235 mOhm @ 800mA, 4.5V |
| Drive Voltage (Max Rds On, Min Rds On): | 1.5V, 4.5V |
| Current - Continuous Drain (Id) @ 25°C: | 800mA (Ta) |
| Drain to Source Voltage (Vdss): | 20V |
| Technology: | MOSFET (Metal Oxide) |
| FET Type: | N-Channel |
| Part Status: | Active |
| Packaging: | Tape & Reel (TR) |
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The SSM3K56FS-LF is a type of metal-oxide-semiconductor field-effect transistor (MOSFET) specifically designed to be used in a wide variety of applications. This type of device is used in electronic circuits as an electronic switch, amplifier, rectifier and oscillator. The SSM3K56FS-LF has a high input resistance and a low output resistance, which makes it suitable for switching, controlling and amplifying electronic signals at high frequencies. It can also be used in a wide range of analog and digital applications.
The SSM3K56FS-LF is a uni-polar (single-gate) field effect transistor designed to handle high current and voltage loads. It features a process of drain-to-source enhancement mode-on-resistance (RDS) and voltage transfer characteristics (VGS). It is a single-gate device, meaning only one gate is used to control the flow of current between the drain and source. It operates at a very low drain-to-source voltage (VDS) between zero and 10 V, making it suitable for power switching applications.
The working principle of the SSM3K56FS-LF can be described as follows: A voltage is applied to the gate terminal which generates an electric field at the gate-channel interface. This electric field breaks down the semiconductor layer between the gate and the source/drain regions, as well as the insulating layer between them. This creates the electric field, which is called the inversion layer and causes the electric current to flow between the source and the drain. The strength of the electric field depends on the magnitude of the applied voltage and determines whether the device is in the on-state or the off-state.
The SSM3K56FS-LF has a wide range of application fields, including power converters, voltage regulators, motor controllers, audio equipment, electric vehicles, and many others. In power converters, the SSM3K56FS-LF is used to switch the power between the supply and the load, thereby controlling the flow of current and voltage. In voltage regulators, this device is used to regulate the voltage and current at the output of the circuit. In motor controllers, it is used to control the speed of electric motors. In audio equipment, it is used to control the audio levels and tone. In electric vehicles, it is used to control the voltage and power to the electric drive train.
The SSM3K56FS-LF is a versatile device that can find application in a wide range of electronic circuits and systems. Its low on-resistance, high switching speeds and low gate-to-drain leakage current makes it a suitable choice for many applications.
The specific data is subject to PDF, and the above content is for reference
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SSM3K56FS,LF Datasheet/PDF