2SC5201(TE6,F,M)

Series:	--
Packaging:	Bulk
Part Status:	Obsolete
Transistor Type:	NPN
Current - Collector (Ic) (Max):	50mA
Voltage - Collector Emitter Breakdown (Max):	600V
Vce Saturation (Max) @ Ib, Ic:	1V @ 500mA, 20mA
Current - Collector Cutoff (Max):	1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	100 @ 20mA, 5V
Power - Max:	900mW
Frequency - Transition:	--
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-226-3, TO-92-3 Long Body
Supplier Device Package:	TO-92MOD

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

2SC5201(TE6,F,M) is a high power NPN silicon transistor, featuring high breakdown voltage with low saturation voltage. It belongs to the single-transistor bipolar junction transistor (BJT) family, which has been widely used in power amplifier circuits, switching circuits and signal amplification applications.The 2SC5201(TE6, F, M) is a silicon NPN bipolar junction transistor that has very similar characteristics to the 2SC5200 series of transistors. It is a high-power transistor, capable of delivering as much as 60 watts of output power when used in an amplifier circuit. The 2SC5201 also has a very high breakdown voltage rating of 800 volts, allowing them to be used in a range of high voltage applications such as switching and signal amplification. The 2SC5201 also has a low saturation punch-through voltage, with a typical rating of 0.2V. This makes it a suitable choice for high-efficiency circuit designs that require a low voltage drop.The 2SC5201 is a single-transistor bipolar junction transistor (BJT). A BJT is a three-terminal semiconductor device made up of two PNP or NPN transistors connected in series. The base terminal of the transistor is connected to the emitter of an NPN transistor while the collector is connected to the emitter of a PNP transistor. In an NPN BJT, current flows from the collector to the emitter when a small current is applied to the base. This is known as forward biasing and it is the mode in which the 2SC5201 operates.The working principle of the 2SC5201 is quite simple. When the base terminal is forward biased, electrons from the emitter are attracted to the collector due to the presence of a small electric field. This electric field, created by the bond between the collector and the base, causes electrons to move from the emitter to the collector. It is this electron flow that is responsible for amplifying a signal by increasing its current. The 2SC5201 can be used to amplify a signal of up to 60 watts, making it an ideal choice for high-power applications such as switching and signal amplification.The 2SC5201 is a powerful and reliable BJT transistor which is capable of operating at high voltage and with low saturation voltage. It is an ideal choice for a wide range of power amplifier circuits, switching circuits, and signal amplification applications. It is a single-transistor BJT, so it is quite easy to use. This makes it an ideal choice for those who are just starting out with BJT transistors.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description