SSM6J507NU,LF Allicdata Electronics
Allicdata Part #:

SSM6J507NULFTR-ND

Manufacturer Part#:

SSM6J507NU,LF

Price: $ 0.13
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: MOSFET P-CH 30V 10A 6UDFN
More Detail: P-Channel 30V 10A (Ta) 1.25W (Ta) Surface Mount 6-...
DataSheet: SSM6J507NU,LF datasheetSSM6J507NU,LF Datasheet/PDF
Quantity: 42000
3000 +: $ 0.11230
Stock 42000Can Ship Immediately
$ 0.13
Specifications
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Package / Case: 6-WDFN Exposed Pad
Supplier Device Package: 6-UDFNB (2x2)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Power Dissipation (Max): 1.25W (Ta)
FET Feature: --
Input Capacitance (Ciss) (Max) @ Vds: 1150pF @ 15V
Vgs (Max): +20V, -25V
Gate Charge (Qg) (Max) @ Vgs: 20.4nC @ 4.5V
Series: U-MOSVI
Rds On (Max) @ Id, Vgs: 20 mOhm @ 4A, 10V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Drain to Source Voltage (Vdss): 30V
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Part Status: Active
Packaging: Tape & Reel (TR) 
Description

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The SSM6J507NU,LF is a common field-effect transistor (FET) that is mainly used in many electronic applications. A FET is a type of transistor, which is a semiconductor device made of three terminal base, gate, and drain. In the case of the SSM6J507NU,LF, these three terminals are connected to an N-channel enhancement-mode enhancement metal–oxide–semiconductor (MOSFET).

The SSM6J507NU,LF is a high-performance MOSFET designed with a low on-state resistance. This FET is capable of operating in both static and dynamic conditions, allowing it to be used in applications such as applications requiring high switching speed, low noise and low on-state resistance. The SSM6J507NU,LF is often found in motor control, automotive and banknote-recognizing systems, as well as other high-frequency and high-speed applications.

The SSM6J507NU,LF has multiple applications, the most notable of which is self-reset power switching. This device is used in many motor control applications due to its fast switching time and ability to handle large current spikes without suffering damage. In addition to controlling motors, this FET is also used for power switching, voltage regulation, and battery-operated equipment.

When using a MOSFET, its working principle is based on the transfer of electrons across a thin layer of gate insulation material. This thin layer of gate insulation creates a barrier between the source and the drain, which allows the flow of electrons to be regulated. Depending on the type of channel and the amount of gate voltage, electrons can either be drawn into the channel or blocked from entering. The number of electrons that can flow across the thin layer of gate insulation determines the amount of current that is allowed to flow through the device.

The SSM6J507NU,LF FET is designed to provide high levels of performance even at high temperatures and in harsh environments. Additionally, it has the ability to operate with a wide range of voltages and currents. With its low on-state resistance, it is able to give reliable performance in any application.

In addition to its excellent performance characteristics, the SSM6J507NU,LF is also very affordable and is easily obtainable. This makes it one of the most popular FETs available on the market today, and has become a go-to device for many engineers and technicians involved in power electronics.

In conclusion, the SSM6J507NU,LF FET is an ideal choice for many applications, and is widely used for self-reset power switching, motor control, and many others. Its excellent performance at high temperatures and high voltages make it an ideal choice for high-speed and high-frequency applications. Moreover, its affordability makes it an attractive option for those looking for a reliable FET without breaking the bank.

The specific data is subject to PDF, and the above content is for reference

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