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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
TLP385(BL-TPRE- ND	TLP385(BL-TPR,E	Toshiba Semiconductor and Storage	View more Part Status: Active Number of Channels: 1 Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 200% @ 5mA Current Transfer Ratio (Max): 600% @ 5mA Turn On / Turn Off Time (Typ): 3s, 3s Rise / Fall Time (Typ): 2s, 3s Input Type: DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C	1000 Order	3000+: $0.1029
TLP2409(F)-ND	TLP2409(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 20% @ 16mA Turn On / Turn Off Time (Typ): 800ns, 800ns (Max) Input Type: DC Output Type: Transistor Voltage - Output (Max): 20V Current - Output / Channel: 16mA Voltage - Forward (Vf) (Typ): 1.57V Current - DC Forward (If) (Max): 25mA Operating Temperature: -55C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Supplier Device Package: 8-SO	91 Order	1+: $1.2033 10+: $0.9752 25+: $0.7502
DF5A6.2FU(TE85L F)TR-ND	DF5A6.2FU(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Type: Zener Unidirectional Channels: 4 Voltage - Reverse Standoff (Typ): 3V Voltage - Breakdown (Min): 5.8V Power Line Protection: No Applications: General Purpose Capacitance @ Frequency: 55pF @ 1MHz Mounting Type: Surface Mount Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	3000 Order	3000+: $0.0529 6000+: $0.0476 15000+: $0.0423 30000+: $0.0397 75000+: $0.0353
2SK879-Y(TE85LF )TR-ND	2SK879-Y(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Current - Drain (Idss) @ Vds (Vgs=0): 1.2mA @ 10V Voltage - Cutoff (VGS off) @ Id: 400mV @ 100nA Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V Power - Max: 100mW Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	1+: $0
2SK4037(TE12LQ) CT-ND	2SK4037(TE12L,Q )	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: N-Channel Frequency: 470MHz Gain: 11.5dB Voltage - Test: 6V Current Rating: 3A Current - Test: 250mA Power - Output: 36.5dBmW Voltage - Rated: 12V Package / Case: SC-70, SOT-323 Supplier Device Package: SC-70	919 Order	1+: $2.1735 10+: $1.9618 100+: $1.5766 500+: $1.2263
2SC2714-O(TE85L F)TR-ND	2SC2714-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 30V Frequency - Transition: 550MHz Noise Figure (dB Typ @ f): 2.5dB @ 100MHz Gain: 23dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 1mA, 6V Current - Collector (Ic) (Max): 20mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	3000 Order	3000+: $0.0377
HN1B04F(TE85LF) TR-ND	HN1B04F(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN, PNP Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 30V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 100mA, 1V Power - Max: 300mW Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
RN1405LFTR-ND	RN1405,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini Base Part Number: RN140*	1000 Order	1+: $0
TPW1R306PLL1QTR -ND	TPW1R306PL,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSIX-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 260A (Tc) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 1.29 mOhm @ 50A, 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 91nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 8100pF @ 30V Power Dissipation (Max): 960mW (Ta), 170W (Tc) Operating Temperature: 175C Mounting Type: Surface Mount Supplier Device Package: 8-DSOP Advance Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.9274
2SC4793F(J-ND	2SC4793,F(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC4793YHF(J-ND	2SC4793,YHF(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
CLS01(TE16RQ)-N D	CLS01(TE16R,Q)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 10A (DC) Voltage - Forward (Vf) (Max) @ If: 0.47V @ 10A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 1mA @ 30V Capacitance @ Vr, F: 530pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: L-FLAT Supplier Device Package: L-FLAT (4x5.5) Operating Temperature - Junction: -40C ~ 125C	1000 Order	1+: $0
TJ60S04M3L(T6L1 NQ-ND	TJ60S04M3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVI Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 60A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 6.3 mOhm @ 30A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 125nC @ 10V Vgs (Max): +10V, -20V Input Capacitance (Ciss) (Max) @ Vds: 6510pF @ 10V Power Dissipation (Max): 90W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.5575
TLP350H(F)-ND	TLP350H(F)	Toshiba Semiconductor and Storage	View more Part Status: Active Technology: Optical Coupling Number of Channels: 1 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Pulse Width Distortion (Max): 350ns Rise / Fall Time (Typ): 15ns, 8ns Current - Output High, Low: 3mA, 3mA Current - Peak Output: 2.5A Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 15 V ~ 30 V Operating Temperature: -40C ~ 125C	1000 Order	--
TLP3924(TP15F)- ND	TLP3924(TP15,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 1500Vrms Input Type: DC Output Type: Photovoltaic Voltage - Output (Max): 30V Current - Output / Channel: 4A Voltage - Forward (Vf) (Typ): 1.3V Current - DC Forward (If) (Max): 30mA Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-SMD, Flat Leads Supplier Device Package: 4-SSOP	1000 Order	1500+: $1.2166
TC74AC138P(F)-N D	TC74AC138P(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Not For New Designs Type: Decoder Circuit: 1 x 3:8 Independent Circuits: 1 Current - Output High, Low: 75mA, 75mA Voltage Supply Source: Single Supply Voltage - Supply: 2 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Through Hole Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP	1 Order	1+: $0.6048
TA48S00AF(T6L1Q )CT-ND	TA48S00AF(T6L1, Q)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Output Configuration: Positive Output Type: Adjustable Number of Regulators: 1 Voltage - Input (Max): 16V Voltage - Output (Min/Fixed): 1.5V Voltage - Output (Max): 9V Voltage Dropout (Max): 0.69V @ 1A (Typ) Current - Output: 1A Current - Quiescent (Iq): 1.7mA Current - Supply (Max): 20mA PSRR: 63dB (120Hz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: TO-252-6, DPak (5 Leads + Tab) Supplier Device Package: 5-HSIP Base Part Number: TA48S	1000 Order	1+: $0
TC7SBL384CFULFC T-ND	TC7SBL384CFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 18 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 3.6 V Switch Time (Ton, Toff) (Max): 6ns, 6ns Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 1A Operating Temperature: -40C ~ 85C (TA) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	8 Order	1+: $0.3402
TC74HC4052APF-N D	TC74HC4052APF	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 100 Ohm Channel-to-Channel Matching (Ron): 5 Ohm Voltage - Supply, Single (V+): 2 V ~ 6 V Voltage - Supply, Dual (V): 2 V ~ 6 V Switch Time (Ton, Toff) (Max): 18ns, 29ns (Typ) -3db Bandwidth: 140MHz Channel Capacitance (CS(off), CD(off)): 2pF, 40pF Current - Leakage (IS(off)) (Max): 100nA Crosstalk: -50dB @ 1MHz Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-DIP (0.300", 7.62mm) Supplier Device Package: 16-DIP Base Part Number: 74HC4052	1000 Order	1+: $0
TLP3823(F-ND	TLP3823(F	Toshiba Semiconductor and Storage	View more Series: TLP3823 Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.64VDC Voltage - Load: 0V ~ 100V Load Current: 3A On-State Resistance (Max): 150 mOhms Termination Style: PC Pin Package / Case: 8-DIP (0.300", 7.62mm) Supplier Device Package: 8-DIP	140 Order	1+: $5.4936 10+: $4.9732 50+: $3.937 100+: $3.3153 250+: $3.1081 500+: $2.8491 1000+: $2.6937
TBD62783APG-ND	TBD62783APG	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Input Type: Non-Inverting Operating Temperature: -40C ~ 85C (TA) Package / Case: 18-DIP (0.300", 7.62mm) Supplier Device Package: 18-DIP	18552 Order	1+: $0.5985 10+: $0.5273 25+: $0.4763 100+: $0.4167 250+: $0.3657 800+: $0.2824 1600+: $0.2552 3200+: $0.2381 5600+: $0.2262
TCK108AGLFTR-ND	TCK108AG,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Type: General Purpose Number of Outputs: 1 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: P-Channel Interface: On/Off Voltage - Load: 1.1 V ~ 5.5 V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 1A Rds On (Typ): 34 mOhm Input Type: Non-Inverting Features: Load Discharge, Slew Rate Controlled Operating Temperature: -40C ~ 85C (TA) Package / Case: 4-UFBGA, WLCSP Supplier Device Package: 4-WCSPD (0.79x0.79)	5000 Order	5000+: $0.1701 10000+: $0.1638 25000+: $0.1575
74HCT4052DTR-ND	74HCT4052D	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Switch Circuit: SP4T Multiplexer/Demultiplexer Circuit: 4:1 Number of Circuits: 2 On-State Resistance (Max): 150 Ohm Channel-to-Channel Matching (Ron): 6 Ohm Voltage - Supply, Single (V+): 4.5 V ~ 5.5 V Voltage - Supply, Dual (V): 1 V ~ 5 V Switch Time (Ton, Toff) (Max): 60ns, 48ns -3db Bandwidth: 180MHz Channel Capacitance (CS(off), CD(off)): 3.5pF Current - Leakage (IS(off)) (Max): 2A Crosstalk: -60dB @ 1MHz Operating Temperature: -40C ~ 125C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOIC	2500 Order	2500+: $0.0717 5000+: $0.0674 12500+: $0.063 25000+: $0.0578 62500+: $0.0556
TC62D722FGEL-ND	TC62D722FG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.240", 6.00mm Width) Supplier Device Package: 24-SSOP	1000 Order	1+: $0
3SK292(TE85RF)T R-ND	3SK292(TE85R,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: N-Channel Dual Gate Frequency: 500MHz Gain: 26dB Voltage - Test: 6V Current Rating: 30mA Noise Figure: 1.4dB Current - Test: 10mA Voltage - Rated: 12.5V Package / Case: SC-61AA Supplier Device Package: SMQ	1000 Order	1+: $0
RN4902FELF(CTTR -ND	RN4902FE,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.0304 8000+: $0.0265 12000+: $0.0225 28000+: $0.0212 100000+: $0.0176
RN1117MFVL3F-ND	RN1117MFV,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 500A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 150mW Mounting Type: Surface Mount Package / Case: SOT-723 Supplier Device Package: VESM	1000 Order	8000+: $0.0183
RN2302LF-ND	RN2302,LF	Toshiba Semiconductor and Storage	View more Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0243
ULN2004AFWGNECT -ND	ULN2004AFWG,N,E	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 7 NPN Darlington Current - Collector (Ic) (Max): 500mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 1.6V @ 500A, 350mA Current - Collector Cutoff (Max): 50A DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 350mA, 2V Power - Max: 1.25W Operating Temperature: -40C ~ 85C (TA) Package / Case: 16-SOIC (0.154", 3.90mm Width) Supplier Device Package: 16-SOL Base Part Number: ULN200*A	880 Order	1+: $0.3717 10+: $0.3112 25+: $0.2727 100+: $0.2336 250+: $0.2025 500+: $0.1713
2SC5088-O(TE85L F)TR-ND	2SC5088-O(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1dB @ 500MHz Gain: 18dB Power - Max: 100mW DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V Current - Collector (Ic) (Max): 80mA Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-82A, SOT-343 Supplier Device Package: USQ	1000 Order	1+: $0
RN4983LF(CTTR-N D	RN4983,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz, 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.0411
2SA1962-OQ-ND	2SA1962-O(Q)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 130W Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N) Base Part Number: 2SA1962	164 Order	1+: $2.0349 10+: $1.8194 50+: $1.6372 100+: $1.4917
TLP2748(TPETR-N D	TLP2748(TP,E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 30kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 50mA Propagation Delay tpLH / tpHL (Max): 120ns, 120ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 15mA Voltage - Supply: 4.5 V ~ 30 V Operating Temperature: -40C ~ 110C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.295", 7.50mm Width) Supplier Device Package: 6-SO	1000 Order	1500+: $0.2736 3000+: $0.2599 7500+: $0.2541 10500+: $0.2443
TLP2662(TP1F)TR -ND	TLP2662(TP1,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 2 Inputs - Side 1/Side 2: 2/0 Voltage - Isolation: 5000Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Open Collector Current - Output / Channel: 25mA Data Rate: 10MBd Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Rise / Fall Time (Typ): 12ns, 3ns Voltage - Forward (Vf) (Typ): 1.55V Current - DC Forward (If) (Max): 20mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Supplier Device Package: 8-SMD	1000 Order	1500+: $0.5041 3000+: $0.4766 7500+: $0.4582 10500+: $0.4491
LB2.8X4.5UTB-ND	LB 2.8X4.5U	Toshiba Semiconductor and Storage	View more Series: Amobeads Packaging: Tape & Box (TB) Part Status: Active Number of Lines: 1 Current Rating (Max): 5A (Typ) Package / Case: Axial, Kinked Radial Bend Mounting Type: Through Hole	1000 Order	6000+: $0.1418
TK9J90ES1E-ND	TK9J90E,S1E	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 900V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 1.3 Ohm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 900A Gate Charge (Qg) (Max) @ Vgs: 46nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 25V Power Dissipation (Max): 250W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-3P(N) Package / Case: TO-3P-3, SC-65-3	2170 Order	1+: $2.2995 25+: $1.8502 100+: $1.6858 500+: $1.365 1000+: $1.1512
TPH8R903NLLQTR- ND	TPH8R903NL,LQ	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 8.9 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 9.8nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 820pF @ 15V Power Dissipation (Max): 1.6W (Ta), 24W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	3000+: $0.2049
2SA1020-Y(T6TRA F-ND	2SA1020-Y(T6TR, A,F	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA1930CKQ(J-ND	2SA1930,CKQ(J	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 180V Vce Saturation (Max) @ Ib, Ic: 1V @ 100mA, 1A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 200MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
2SC3328-YHOF(M- ND	2SC3328-Y,HOF(M	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 2A Voltage - Collector Emitter Breakdown (Max): 80V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V Power - Max: 900mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0

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