Allicdata Part #: | RN2302LF-ND |
Manufacturer Part#: |
RN2302,LF |
Price: | $ 0.03 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | X34 PB-F USM TRANSISTOR PD 100MW |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | RN2302,LF Datasheet/PDF |
Quantity: | 1000 |
3000 +: | $ 0.02434 |
Series: | -- |
Part Status: | Active |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 50 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 200MHz |
Power - Max: | 100mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | USM |
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The RN2302, LF is a single-bipolar transistor pre-biased to start from a predetermined and regulated bias point. This makes it ideal for use in applications such as logic level switching, protection or amplification. To understand the functionality of this device, it helps to explore both the application field and the working principle of the RN2302, LF.
Application Field
The RN2302, LF is an excellent choice when miniature pre-biased switching is required in an application, such as in pulse-width modulation (PWM) and electro-optics. Typical applications include LED lighting, optical communication systems, and voltage regulation. This device can also be useful in audio and radio frequency applications, as well as low-noise amplifiers, as it boasts a wideband frequency response and low distortion. Additionally, it can be used in high voltage control circuits and switch-mode power supplies.
Working Principle
As a bipolar transistor, the RN2302, LF operates around a base-emitter voltage, or VBE. This is the voltage that the transistor works with to determine the behavior of the device. The VBE of the RN2302, LF is predetermined, and does not change throughout the life of the device. This makes it ideal for use in miniature pre-biased switching, as a reliable and stable behavior is maintained.
The RN2302, LF is designed as a two-terminal device, with the two terminals being base and emitter (B-E). The device amplifies current when the base terminal is more forward biased than the emitter terminal in relation to the current flow direction. This principle is the basis of the entire device operation and allows it to be used in logic level switching, protection, or amplification.
The RN2302, LF is designed as an NPN transistor, which stands for negative-positive-negative. This type of device is designed so that current flows from the negative side (collector) to the positive side (emitter). In most applications the base current is used to control the collector current, so that signals can be amplified in the output. Additionally, the temperature coefficient of the device is used to precisely control the VBE, allowing for more accurate and reliable operation at different temperatures. This is especially important when operating under extreme conditions.
To summarize, the RN2302, LF is a single-bipolar transistor pre-biased to start from a predetermined and regulated bias point. This makes it ideal for tiny applications such as logic level switching, protection or amplification, as well as a wide range of power supply functions and audio and radio frequency applications. The device operates based on the VBE, and its temperature coefficient allows for precise control of the VBE even under extreme conditions.
The specific data is subject to PDF, and the above content is for reference
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