Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
2SA2154CT-GRL3F TR-ND	2SA2154CT-GR,L3 F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	10000+: $0.027 30000+: $0.0254 50000+: $0.0238 100000+: $0.0212
CRS20I30A(TE85L QM-ND	CRS20I30A(TE85L ,QM	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 2A Voltage - Forward (Vf) (Max) @ If: 490mV @ 2A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 60A @ 30V Capacitance @ Vr, F: 50pF @ 10V, 1MHz Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Operating Temperature - Junction: 150C (Max)	1000 Order	3000+: $0.0928
30JL2C41(F)-ND	30JL2C41(F)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Diode Configuration: 1 Pair Common Cathode Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 600V Current - Average Rectified (Io) (per Diode): 15A Voltage - Forward (Vf) (Max) @ If: 2V @ 15A Speed: Fast Recovery = 200mA (Io) Reverse Recovery Time (trr): 50ns Current - Reverse Leakage @ Vr: 50A @ 600V Operating Temperature - Junction: -40C ~ 150C Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	1000 Order	1+: $0
1SS399TE85LFCT- ND	1SS399TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100nA @ 400V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SC-61B	1000 Order	1+: $0
TK6P60WRVQTR-ND	TK6P60W,RVQ	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 6.2A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 820 mOhm @ 3.1A, 10V Vgs(th) (Max) @ Id: 3.7V @ 310A Gate Charge (Qg) (Max) @ Vgs: 12nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 390pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.5771
CRZ12(TE85L,Q)- ND	CRZ12(TE85L,Q)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 12V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 8V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ12	1000 Order	1+: $0
CRZ33(TE85L,Q,M )-ND	CRZ33(TE85L,Q,M )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Voltage - Zener (Nom) (Vz): 33V Tolerance: 10% Power - Max: 700mW Impedance (Max) (Zzt): 30 Ohms Current - Reverse Leakage @ Vr: 10A @ 26.4V Voltage - Forward (Vf) (Max) @ If: 1V @ 200mA Operating Temperature: -40C ~ 150C Mounting Type: Surface Mount Package / Case: SOD-123F Supplier Device Package: S-FLAT (1.6x3.5) Base Part Number: CRZ33	1000 Order	1+: $0
2SC2229-Y(MITFM )-ND	2SC2229-Y(MIT,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 500mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
TK34A10N1S4X-ND	TK34A10N1,S4X	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25C: 34A (Tc) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 9.5 mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 4V @ 500A Gate Charge (Qg) (Max) @ Vgs: 38nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2600pF @ 50V Power Dissipation (Max): 35W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	50 Order	1+: $1.1214 50+: $0.9057 100+: $0.8151 500+: $0.6339 1000+: $0.5253
SSM4K27CTTPL3TR -ND	SSM4K27CTTPL3	Toshiba Semiconductor and Storage	View more Series: U-MOSIII Packaging: Tape & Reel (TR) Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25C: 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4V Rds On (Max) @ Id, Vgs: 205 mOhm @ 250mA, 4V Vgs(th) (Max) @ Id: 1.1V @ 1mA Vgs (Max): 12V Input Capacitance (Ciss) (Max) @ Vds: 174pF @ 10V Power Dissipation (Max): 400mW (Ta) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: CST4 (1.2x0.8) Package / Case: 4-SMD, No Lead	1000 Order	1+: $0
TK20A25DS5Q(M-N D	TK20A25D,S5Q(M	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Obsolete FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 250V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 100 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 55nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 2550pF @ 100V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	1+: $0
TCR2EF25LM(CTCT -ND	TCR2EF25,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.5V Voltage Dropout (Max): 0.23V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0.2457 10+: $0.1751 25+: $0.1363 100+: $0.1032 250+: $0.073 500+: $0.0584 1000+: $0.0448
TC7WP3125FK(T5L F)TR-ND	TC7WP3125FK(T5L ,F)	Toshiba Semiconductor and Storage	View more Series: TC7WP Packaging: Tape & Reel (TR) Part Status: Active Type: Bus Switch Circuit: 2 x 1:1 Independent Circuits: 1 Current - Output High, Low: 12mA, 12mA Voltage Supply Source: Dual Supply Voltage - Supply: 1.1 V ~ 2.7 V, 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 8-VFSOP (0.091", 2.30mm Width) Supplier Device Package: US8	3000 Order	3000+: $0.0925
LTM09C362T-ND	LTM09C362T	Toshiba Semiconductor and Storage	View more Part Status: Discontinued at Digi-Key Lead Free Status / RoHS Status: Lead free / RoHS Compliant Display Type: TFT - Color Moisture Sensitivity Level (MSL): 1 (Unlimited) Display Mode: Transmissive Diagonal Screen Size: 8.9" (226.06mm) Viewing Area: 195.07mm W x 113.40mm H Backlight: CCFL Dot Pixels: 1024 x 600 Interface: LVDS Graphics Color: Red, Green, Blue (RGB) Dot Pitch: 0.19mm W x 0.19mm H	1000 Order	1+: $0
TB67H452FTGELTR -ND	TB67H452FTG,EL	Toshiba Semiconductor and Storage	View more Series: * Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Mounting Type: Surface Mount Package / Case: 48-VFQFN Exposed Pad Supplier Device Package: 48-QFN (7x7)	2000 Order	2000+: $1.1731
TC7SB67CFULFCT- ND	TC7SB67CFU,LF	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Switch Circuit: SPST - NO Multiplexer/Demultiplexer Circuit: 1:1 Number of Circuits: 1 On-State Resistance (Max): 7 Ohm Voltage - Supply, Single (V+): 1.65 V ~ 5.5 V Switch Time (Ton, Toff) (Max): 4ns, 4.5ns Channel Capacitance (CS(off), CD(off)): 5pF Current - Leakage (IS(off)) (Max): 1A Operating Temperature: -40C ~ 85C (TA) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Supplier Device Package: USV	1000 Order	1+: $0
1SS306TE85LFTR- ND	1SS306TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 2 Independent Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 200V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.2V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 60ns Current - Reverse Leakage @ Vr: 1A @ 200V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: SC-61AA Supplier Device Package: SC-61B	1000 Order	1+: $0
TK11A45D(STA4QM )-ND	TK11A45D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 11A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 620 mOhm @ 5.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1050pF @ 25V Power Dissipation (Max): 40W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.085
TK12A53D(STA4QM )-ND	TK12A53D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 525V Current - Continuous Drain (Id) @ 25C: 12A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 580 mOhm @ 6A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.5124
MT3S111P(TE12LF )TR-ND	MT3S111P(TE12L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 6V Frequency - Transition: 8GHz Noise Figure (dB Typ @ f): 1.25dB @ 1GHz Gain: 10.5dB Power - Max: 1W DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 30mA, 5V Current - Collector (Ic) (Max): 100mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	10000 Order	1000+: $0.241 2000+: $0.2249 5000+: $0.2137 10000+: $0.2048 25000+: $0.1992
RN1109(T5LFT)TR -ND	RN1109(T5L,F,T)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	1+: $0
RN1965(TE85LF)T R-ND	RN1965(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	1+: $0
2SA1587-GRLFTR- ND	2SA1587-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0259 6000+: $0.0225 15000+: $0.0191 30000+: $0.018 75000+: $0.0169 150000+: $0.015
TTC004BQ-ND	TTC004B,Q	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 1.5A Voltage - Collector Emitter Breakdown (Max): 160V Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 140 @ 100mA, 5V Power - Max: 10W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-225AA, TO-126-3 Supplier Device Package: TO-126N	6727 Order	1+: $0.3654 10+: $0.3093 25+: $0.2709 100+: $0.2322 250+: $0.2012 500+: $0.1703 1000+: $0.1316 2500+: $0.12 5000+: $0.1122
AB5X4X3DY-ND	AB5X4X3DY	Toshiba Semiconductor and Storage	View more Series: Amobeads Part Status: Active Type: Round Design: Solid Mounting Type: Free Hanging	1000 Order	10000+: $0.1764
RN1105LF(CTTR-N D	RN1105,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Active Moisture Sensitivity Level (MSL): 1 (Unlimited) Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	6000 Order	3000+: $0.0304 6000+: $0.0265 15000+: $0.0225 30000+: $0.0212 75000+: $0.0198 150000+: $0.0176
TPH3300CNHL1QTR -ND	TPH3300CNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 18A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 33 mOhm @ 9A, 10V Vgs(th) (Max) @ Id: 4V @ 300A Gate Charge (Qg) (Max) @ Vgs: 10.6nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1100pF @ 75V Power Dissipation (Max): 1.6W (Ta), 57W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	1000 Order	5000+: $0.45
2SA1887(F)-ND	2SA1887(F)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 10A Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 5A Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 1V Power - Max: 2W Frequency - Transition: 45MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
TPH5900CNHL1QTR -ND	TPH5900CNH,L1Q	Toshiba Semiconductor and Storage	View more Series: U-MOSVIII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 150V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 59 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 4V @ 200A Gate Charge (Qg) (Max) @ Vgs: 7nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 600pF @ 75V Power Dissipation (Max): 1.6W (Ta), 42W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN	4960 Order	5000+: $0.3469
2SC4793(LBSANFM )-ND	2SC4793(LBSAN,F ,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: NPN Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 1.5V @ 50mA, 500mA Current - Collector Cutoff (Max): 1A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Power - Max: 2W Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Supplier Device Package: TO-220NIS	1000 Order	1+: $0
TK35S04K3L(T6L1 NQ-ND	TK35S04K3L(T6L1 ,NQ	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25C: 35A (Ta) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Rds On (Max) @ Id, Vgs: 10.3 mOhm @ 17.5A, 10V Vgs(th) (Max) @ Id: 3V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 28nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1370pF @ 10V Power Dissipation (Max): 58W (Tc) Operating Temperature: 175C (TJ) Mounting Type: Surface Mount Supplier Device Package: DPAK+ Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63	1000 Order	2000+: $0.3753
JDH2S01FSTPL3TR -ND	JDH2S01FSTPL3	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky - Single Voltage - Peak Reverse (Max): 4V Current - Max: 25mA Capacitance @ Vr, F: 0.6pF @ 0.2V, 1MHz Operating Temperature: 125C (TJ) Package / Case: 2-SMD, Flat Lead Supplier Device Package: fSC	1000 Order	1+: $0
TPCC8067-HLQ(S- ND	TPCC8067-H,LQ(S	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 9A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 25 mOhm @ 4.5A, 10V Vgs(th) (Max) @ Id: 2.3V @ 100A Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 690pF @ 10V Power Dissipation (Max): 700mW (Ta), 15W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-TSON Advance (3.3x3.3) Package / Case: 8-PowerVDFN	1000 Order	1+: $0
JDH2S02SLL3FTR- ND	JDH2S02SL,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 10V Current - Average Rectified (Io): 10mA (DC) Speed: Small Signal = Current - Reverse Leakage @ Vr: 25A @ 500mV Capacitance @ Vr, F: 0.25pF @ 200mV, 1MHz Mounting Type: Surface Mount Package / Case: 0201 (0603 Metric) Supplier Device Package: SL2 Operating Temperature - Junction: 125C (Max)	10000 Order	10000+: $0.0513 30000+: $0.048 50000+: $0.0441
CUS08F30H3FTR-N D	CUS08F30,H3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 800mA Voltage - Forward (Vf) (Max) @ If: 220mV @ 10mA Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 50A @ 30V Capacitance @ Vr, F: 170pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Supplier Device Package: USC Operating Temperature - Junction: 125C (Max)	6000 Order	3000+: $0.0365 6000+: $0.0318 15000+: $0.027 30000+: $0.0254 75000+: $0.0238
TCR2LN10LFTR-ND	TCR2LN10,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 1V Voltage Dropout (Max): 1.38V @ 150mA Current - Output: 200mA Current - Quiescent (Iq): 2A Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	10000 Order	10000+: $0.0548 30000+: $0.0503 50000+: $0.0484 100000+: $0.0473
TCR3DF28LM(CTTR -ND	TCR3DF28,LM(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 2.8V Voltage Dropout (Max): 0.27V @ 300mA Current - Output: 300mA Current - Quiescent (Iq): 65A Current - Supply (Max): 78A PSRR: 70dB (1kHz) Control Features: Enable Protection Features: Over Current, Over Temperature Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	3000 Order	3000+: $0.0567 6000+: $0.0536 15000+: $0.0488 30000+: $0.0457 75000+: $0.041 150000+: $0.0394
TCR2EN30LFTR-ND	TCR2EN30,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Output Configuration: Positive Output Type: Fixed Number of Regulators: 1 Voltage - Input (Max): 5.5V Voltage - Output (Min/Fixed): 3V Current - Output: 200mA Current - Quiescent (Iq): 60A PSRR: 73dB (1kHz) Control Features: Enable Protection Features: Over Current Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 4-XFDFN Exposed Pad Supplier Device Package: 4-SDFN (0.8x0.8)	1000 Order	10000+: $0.0548
TBD62783AFNG-ND	TBD62783AFNG	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Preliminary Switch Type: General Purpose Number of Outputs: 8 Ratio - Input:Output: 1:1 Output Configuration: High Side Output Type: N-Channel Interface: On/Off Voltage - Load: 50V (Max) Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 500mA Input Type: Non-Inverting Operating Temperature: -40C ~ 85C (TA) Package / Case: 18-LSSOP (0.173", 4.40mm Width) Supplier Device Package: 18-SSOP	1000 Order	1+: $0
TLP2361(V4-TPLE TR-ND	TLP2361(V4-TPL, E	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Inputs - Side 1/Side 2: 1/0 Voltage - Isolation: 3750Vrms Common Mode Transient Immunity (Min): 20kV/s Input Type: DC Output Type: Push-Pull, Totem Pole Current - Output / Channel: 10mA Data Rate: 15MBd Propagation Delay tpLH / tpHL (Max): 80ns, 80ns Rise / Fall Time (Typ): 3ns, 3ns Voltage - Forward (Vf) (Typ): 1.5V Current - DC Forward (If) (Max): 10mA Voltage - Supply: 2.7 V ~ 5.5 V Operating Temperature: -40C ~ 125C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.179", 4.55mm Width), 5 Leads Supplier Device Package: 6-SO, 5 Lead	1000 Order	3000+: $0.2396 6000+: $0.2342 15000+: $0.2252

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