
Allicdata Part #: | 2SC2714-O(TE85LF)TR-ND |
Manufacturer Part#: |
2SC2714-O(TE85L,F) |
Price: | $ 0.04 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Toshiba Semiconductor and Storage |
Short Description: | TRANS RF NPN 30V 550MHZ S-MINI |
More Detail: | RF Transistor NPN 30V 20mA 550MHz 100mW Surface Mo... |
DataSheet: | ![]() |
Quantity: | 3000 |
3000 +: | $ 0.03767 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | NPN |
Voltage - Collector Emitter Breakdown (Max): | 30V |
Frequency - Transition: | 550MHz |
Noise Figure (dB Typ @ f): | 2.5dB @ 100MHz |
Gain: | 23dB |
Power - Max: | 100mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 70 @ 1mA, 6V |
Current - Collector (Ic) (Max): | 20mA |
Operating Temperature: | 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | S-Mini |
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The 2SC2714-O(TE85L,F) is one of the most popular transistors used in the RF field. This transistor is known for its high frequency performance and reliability. It is used in a wide variety of applications, ranging from low power radio frequency (RF) amplifiers to high voltage power transistors. The 2SC2714-O(TE85L,F) is a high-voltage, low-power-dissipation NPN bipolar junction transistor (BJT) with a frequency range of up to 500MHz. It is capable of switching high current signals between different levels of DC or AC. This transistor’s main applications include amplifier, oscillator and power supply circuits.
The 2SC2714-O(TE85L,F) offers excellent high-frequency performance due to its robust structure and dielectric base layer. It offers high gain performance along with high-frequency stability and low noise. The transistor is designed to provide the highest level of EMI/RFI protection and is typically used in RF transmissions. This transistor provides good thermal stability, low power consumption and simplified product design process.
The working principle of the 2SC2714-O(TE85L,F) is based on the basic principle of a BJT. A BJT consists of three terminals, which are the base, collector and emitter. The base is the control terminal, whereas the collector and emitter act as the output terminals. When a voltage is applied to the base terminal, it allows current to flow from the emitter to the collector, thus creating an amplified signal. The collector current is controlled by the base current and the voltage at the emitter and collector is determined by the base current. This is how the transistor amplifies the signal.
The 2SC2714-O(TE85L,F) has a wide variety of applications and is an ideal choice for high-frequency, low-power applications. It can be used in RF power amplifiers, RF switches, RF receivers and RF transmitters. It is also suitable for high-frequency oscillators and voltage regulators. The 2SC2714-O(TE85L,F) is an excellent choice for designs that require high linearity or noise performance. It is also a popular choice for high-end audio systems, as it is capable of providing excellent sound quality.
In conclusion, the 2SC2714-O(TE85L,F) is a high-performance, reliable NPN bipolar junction transistor (BJT) which can be used in a wide range of applications in the RF field. It offers excellent high-frequency performance, high linearity and low noise. The transistor’s working principle is based on the basic BJT principle and it can be used in RF power amplifiers, RF switches, RF receivers, RF transmitters as well as other audio systems. It is an ideal choice for designs that require high linearity or noise performance.
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