RN4983,LF(CT Allicdata Electronics

RN4983,LF(CT Discrete Semiconductor Products

Allicdata Part #:

RN4983LF(CTTR-ND

Manufacturer Part#:

RN4983,LF(CT

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS NPN/PNP PREBIAS 0.2W US6
More Detail: Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP -...
DataSheet: RN4983,LF(CT datasheetRN4983,LF(CT Datasheet/PDF
Quantity: 1000
3000 +: $ 0.04108
Stock 1000Can Ship Immediately
$ 0.05
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 22 kOhms
Resistor - Emitter Base (R2): 22 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz, 200MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Supplier Device Package: US6
Description

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RN4983 and LF (CT) application fields and working principles are typical examples of transistors - bipolar (BJT) - arrays, pre-biased. Compared to a linear array of the same vintage, pre-biased transistors tend to provide greater efficiency, better dynamic response, signficantly improved RF performance, improved harmonic distortion and power output characteristics.

The RN4983 combines two BJT transistors into a single package, providing increased efficiency and power supply noise rejection. The two transistors are composed of a pnp transistor with a high current gain and a npn transistor with a low voltage gain. The design of the RN4983 makes it ideal for applications such as audio power amplifiers, power supplies and high current drive circuits. Furthermore, the coaxial design of the RN4983 provides excellent immunity to electro-static discharges and makes it a good choice for environments where electro-magnetic interference is prevalent.

As for the LF (CT) application field and working principle, LF (CT) transistors are designed to provide excellent power supply noise immunity, superior stability and high current gain. These transistors are typically utilized in high-performance switching power supplies and relay driver circuits, providing excellent performance and reliability. The LF (CT) transistor consists of an NPN type transistor with an integrated inductor (CT). The current flow in the collector of the NPN transistor is also allowed through the two terminals of the integrated inductor, which increases the efficiency and reduces the power losses significantly.

The pre-biased package of the RN4983 and LF (CT) provide excellent stability, improved RF performance and reduced power dissipation. Furthermore, the output of these pre-biased transistors is approximately proportional to the emitter voltage, which makes them an ideal choice for power supply circuits and low noise/high power audio amplifiers.

The RN4983 and LF (CT) transistors - bipolar (BJT) - arrays, pre-biased are very efficient and stable transistors, making them an excellent choice for many applications. By using the pre-biased design and integrated inductor, these transistors are capable of providing superior performance, excellent power supply noise immunity and improved dynamic response. Thus, in conclusion, pre-biased transistors are an ideal choice for audio power amplifiers, high current drive circuits, and other high-performance switching power supply and relay driver circuits.

The specific data is subject to PDF, and the above content is for reference

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