2SC5088-O(TE85L,F) Allicdata Electronics

2SC5088-O(TE85L,F) Discrete Semiconductor Products

Allicdata Part #:

2SC5088-O(TE85LF)TR-ND

Manufacturer Part#:

2SC5088-O(TE85L,F)

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: Toshiba Semiconductor and Storage
Short Description: TRANS RF NPN 12V 500MHZ USQ
More Detail: RF Transistor NPN 12V 80mA 7GHz 100mW Surface Moun...
DataSheet: 2SC5088-O(TE85L,F) datasheet2SC5088-O(TE85L,F) Datasheet/PDF
Quantity: 1000
1 +: 0.00000
Stock 1000Can Ship Immediately
$ 0
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Transistor Type: NPN
Voltage - Collector Emitter Breakdown (Max): 12V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1dB @ 500MHz
Gain: 18dB
Power - Max: 100mW
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 20mA, 10V
Current - Collector (Ic) (Max): 80mA
Operating Temperature: 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-82A, SOT-343
Supplier Device Package: USQ
Description

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2SC5088-O, otherwise known as TE85L,F, is a bipolar junction transistor (BJT) belonging to the radio frequency (RF) family. The device was designed and produced by NSC/Fairchild semiconductor and can be used as a general-purpose amplifier in electronics circuits up to an operating frequency of 500mhz.

A bipolar junction transistor works by creating two p-n junctions between the two types of semiconductors inside the transistor. A small electric current is applied to one side and the transistor starts conducting. This produces a larger current at the other side, which is used to control the power or voltage, thus amplifying the signal. The 2SC5088-O is a NPN bipolar RF transistor, which utilizes this mechanism, and can withstand power dissipation of up to 500mW, making it a higher-powered device than other similar transistors.

The 2SC5088-O is used for a wide variety of applications, ranging from simple switching to high speed operation in amplifiers, detectors, and oscillators. It is an excellent choice for RF amplifiers and mixer designs, as it offers noise figures of 5dB, maximum gains of 25dB, and a wide bandwidth which allows for a high degree of frequency agility. The 2SC5088-O also boasts low collector-emitter saturation voltage and high current gain, making it suitable for use in low-voltage circuits. Additionally, its broad frequency range makes it suitable for radio frequency amplifiers as well as DC-DC converters and noise filters.

The well-rounded features of the 2SC5088-O make it a reliable choice for many applications. It has a maximum operating temperature of 150°C and its enclosed package makes it well-suited for use in demanding industrial applications. Furthermore, its small size means that it can be used in circuits with limited space, making it an essential component for many engineers working in the field of small-scale electronics.

The 2SC5088-O is a popular and reliable RF transistor which is used for a variety of different applications. Its wide bandwidth and low noise figures make it suitable for amplifying radio signals and its enclosed package ensures durability and reliability, making it an essential component in the electronics industry.

The specific data is subject to PDF, and the above content is for reference

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