Storage logic trigger - Allicdata Electronics

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Allicdata Part#	Mft.Part#	Company	Spec.	QTY.	Pricing(USD)
RN1113ACT(TPL3) TR-ND	RN1113ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
RN1317(TE85LF)T R-ND	RN1317(TE85L,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 4.7 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM Base Part Number: RN131*	1000 Order	3000+: $0.0243
RN1966FE(TE85LF )TR-ND	RN1966FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 NPN - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.0441
2SC4207-GR(TE85 LFTR-ND	2SC4207-GR(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Common Emitter Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
RN2908FE(TE85LF )TR-ND	RN2908FE(TE85L, F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 200MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	4000 Order	4000+: $0.041
RN2903LF(CTTR-N D	RN2903,LF(CT	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Frequency - Transition: 200MHz Power - Max: 200mW Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Supplier Device Package: US6	1000 Order	3000+: $0.032
RN2108ACT(TPL3) TR-ND	RN2108ACT(TPL3)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP - Pre-Biased Current - Collector (Ic) (Max): 80mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 47 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 150mV @ 250A, 5mA Current - Collector Cutoff (Max): 500nA Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Supplier Device Package: CST3	1000 Order	1+: $0
CMS01CT-ND	CMS01(TE12L)	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 30V Current - Average Rectified (Io): 3A Voltage - Forward (Vf) (Max) @ If: 370mV @ 3A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 5mA @ 30V Mounting Type: Surface Mount Package / Case: SOD-128 Supplier Device Package: M-FLAT (2.4x3.8) Operating Temperature - Junction: -40C ~ 125C Base Part Number: CMS01	1000 Order	1+: $0
TK25E06K3S1X(S- ND	TK25E06K3,S1X(S	Toshiba Semiconductor and Storage	View more Series: U-MOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25C: 25A (Ta) Rds On (Max) @ Id, Vgs: 18 mOhm @ 12.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Power Dissipation (Max): 60W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220-3 Package / Case: TO-220-3	1000 Order	50+: $0.6735
TK10A60WS4VX-ND	TK10A60W,S4VX	Toshiba Semiconductor and Storage	View more Series: DTMOSIV Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 600V Current - Continuous Drain (Id) @ 25C: 9.7A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 380 mOhm @ 4.9A, 10V Vgs(th) (Max) @ Id: 3.7V @ 500A Gate Charge (Qg) (Max) @ Vgs: 20nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 700pF @ 300V FET Feature: Super Junction Power Dissipation (Max): 30W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	11 Order	1+: $2.0286
2SC5200N(S1ES)- ND	2SC5200N(S1,E,S )	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 15A Voltage - Collector Emitter Breakdown (Max): 230V Vce Saturation (Max) @ Ib, Ic: 3V @ 800mA, 8A Current - Collector Cutoff (Max): 5A (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 1A, 5V Power - Max: 150W Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Supplier Device Package: TO-3P(N)	600 Order	1+: $1.4931 10+: $1.3463 25+: $1.2023 100+: $1.082 250+: $0.9618 500+: $0.8416 1000+: $0.6973 2500+: $0.6492
TC358748XBG(EL) -ND	TC358748XBG(EL)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Applications: Camera Interface: SPI Voltage - Supply: 1.8 V ~ 3.3 V Package / Case: 80-VFBGA Supplier Device Package: 80-VFBGA (7x7) Mounting Type: Surface Mount	1000 Order	--
TMP86PH06UG(CKJ Z)-ND	TMP86PH06UG(C,K JZ)	Toshiba Semiconductor and Storage	View more Series: TLCS-870/C Packaging: Tray Part Status: Active Core Size: 8-Bit Speed: 16MHz Connectivity: EBI/EMI Number of I/O: 8 Program Memory Size: 16KB (16K x 8) Program Memory Type: OTP RAM Size: 512 x 8 Voltage - Supply (Vcc/Vdd): 1.8 V ~ 5.5 V Oscillator Type: External Operating Temperature: -40C ~ 85C (TA) Package / Case: 44-LQFP Supplier Device Package: 44-LQFP (10x10)	450 Order	1+: $7.434 10+: $6.6906 25+: $6.0959 100+: $5.5012 250+: $5.0551 500+: $4.6091 1000+: $4.0144
TLP3406S(TPETR- ND	TLP3406S(TP,E	Toshiba Semiconductor and Storage	View more Series: TLP3406S Packaging: Tape & Reel (TR) Part Status: Active Mounting Type: Surface Mount Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.21VDC Voltage - Load: 0V ~ 30V Load Current: 1.5A On-State Resistance (Max): 200 mOhms Termination Style: SMD (SMT) Tab Package / Case: 4-SMD (0.079", 2.00mm) Supplier Device Package: S-VSON4	10000 Order	2500+: $1.4491
TC35661SBG-007E LTR-ND	TC35661SBG-007, EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Type: TxRx Only RF Family/Standard: Bluetooth Protocol: Bluetooth v4.0 Frequency: 2.4GHz Data Rate (Max): 2Mbps Power - Output: 2dBm Sensitivity: -90dBm Serial Interfaces: IC, IS, SPI, UART Voltage - Supply: 1.8 V ~ 3.3 V Current - Receiving: 63mA Current - Transmitting: 63mA Operating Temperature: -40C ~ 85C Package / Case: 64-FBGA	1000 Order	2000+: $1.0893
TC7QPB9307FT(EL )TR-ND	TC7QPB9307FT(EL )	Toshiba Semiconductor and Storage	View more Series: TC7QP Packaging: Tape & Reel (TR) Part Status: Active Type: Bus Switch Circuit: 4 x 1:1 Independent Circuits: 1 Voltage Supply Source: Dual Supply Voltage - Supply: 1.65 V ~ 5 V, 2.3 V ~ 5.5 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 14-TSSOP (0.173", 4.40mm Width) Supplier Device Package: 14-TSSOP Base Part Number: 7QPB9307	2000 Order	2000+: $0.1918
TD62083AFGNEL-N D	TD62083AFG,N,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Type: Driver Number of Drivers/Receivers: 8/0 Voltage - Supply: 5V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 18-SOIC (0.276", 7.00mm Width) Supplier Device Package: 18-SOP	1000 Order	1+: $0
TLP4597GF-ND	TLP4597G(F)	Toshiba Semiconductor and Storage	View more Series: TLP4597G Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NC (1 Form B) Output Type: AC, DC Voltage - Input: 1.15VDC Voltage - Load: 0V ~ 350V Load Current: 150mA On-State Resistance (Max): 25 Ohms Termination Style: PC Pin Package / Case: 6-DIP (0.300", 7.62mm) Supplier Device Package: 6-DIP	1000 Order	50+: $0.869
TLP3556(F)-ND	TLP3556(F)	Toshiba Semiconductor and Storage	View more Series: TLP3556 Packaging: Tube Part Status: Active Mounting Type: Through Hole Circuit: SPST-NO (1 Form A) Output Type: AC, DC Voltage - Input: 1.33VDC Voltage - Load: 0V ~ 100V Load Current: 1A On-State Resistance (Max): 700 mOhms Termination Style: PC Pin Package / Case: 4-DIP (0.300", 7.62mm) Supplier Device Package: 4-DIP	1000 Order	100+: $1.4969
TC7MBL3257CFK-E LCT-ND	TC7MBL3257CFK-E L	Toshiba Semiconductor and Storage	View more Series: TC7MB Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Type: Multiplexer/Demultiplexer Circuit: 4 x 2:1 Independent Circuits: 1 Voltage Supply Source: Single Supply Voltage - Supply: 1.65 V ~ 3.6 V Operating Temperature: -40C ~ 85C Mounting Type: Surface Mount Package / Case: 16-VFSOP (0.118", 3.00mm Width) Supplier Device Package: 16-VSSOP Base Part Number: 7MBL3257	1000 Order	--
TPCA8064-HLQ(CM -ND	TPCA8064-H,LQ(C M	Toshiba Semiconductor and Storage	View more Series: U-MOSVII-H Packaging: Tape & Reel (TR) Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 20A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Rds On (Max) @ Id, Vgs: 8.2 mOhm @ 10A, 10V Vgs(th) (Max) @ Id: 2.3V @ 200A Gate Charge (Qg) (Max) @ Vgs: 23nC @ 10V Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 1900pF @ 10V Power Dissipation (Max): 1.6W (Ta), 32W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Supplier Device Package: 8-SOP Advance (5x5) Package / Case: 8-PowerVDFN Base Part Number: TK650	1000 Order	--
TK13A45D(STA4QM )-ND	TK13A45D(STA4,Q ,M)	Toshiba Semiconductor and Storage	View more Series: -MOSVII Packaging: Tube Part Status: Active FET Type: N-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 450V Current - Continuous Drain (Id) @ 25C: 13A (Ta) Drive Voltage (Max Rds On, Min Rds On): 10V Rds On (Max) @ Id, Vgs: 460 mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id: 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs: 25nC @ 10V Vgs (Max): 30V Input Capacitance (Ciss) (Max) @ Vds: 1350pF @ 25V Power Dissipation (Max): 45W (Tc) Operating Temperature: 150C (TJ) Mounting Type: Through Hole Supplier Device Package: TO-220SIS Package / Case: TO-220-3 Full Pack	1000 Order	50+: $1.4418
TL1WK-DW1LTR-ND	TL1WK-DW1,L	Toshiba Semiconductor and Storage	View more Series: LETERAS Packaging: Tape & Reel (TR) Lead Free Status / RoHS Status: Lead free / RoHS Compliant Part Status: Obsolete Moisture Sensitivity Level (MSL): 2A (4 Weeks) Color: White, Cool CCT (K): 6500K Flux @ 25C, Current - Test: 22 lm (18 lm ~ 26 lm) Current - Test: 60mA Voltage - Forward (Vf) (Typ): 2.8V Lumens/Watt @ Current - Test: 131 lm/W CRI (Color Rendering Index): 80 Current - Max: 180mA Mounting Type: Surface Mount Package / Case: 2-SMD, No Lead Supplier Device Package: SMD Size / Dimension: 0.026" L x 0.026" W (0.65mm x 0.65mm) Height - Seated (Max): 0.015" (0.39mm) Thermal Resistance of Package: 17C/W	1000 Order	1+: $0
2SA1832-GRLFTR- ND	2SA1832-GR,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Supplier Device Package: SSM	1000 Order	3000+: $0.0228
2SA949-O(TE6FM) -ND	2SA949-O(TE6,F, M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 50mA Voltage - Collector Emitter Breakdown (Max): 150V Vce Saturation (Max) @ Ib, Ic: 800mV @ 1mA, 10A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 10mA, 5V Power - Max: 800mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: TO-92MOD	1000 Order	1+: $0
2SA965-Y(FM)-ND	2SA965-Y(F,M)	Toshiba Semiconductor and Storage	View more Packaging: Bulk Part Status: Obsolete Transistor Type: PNP Current - Collector (Ic) (Max): 800mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Power - Max: 900mW Frequency - Transition: 120MHz Operating Temperature: 150C (TJ) Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body Supplier Device Package: LSTM	1000 Order	1+: $0
2SA1721RTE85LFT R-ND	2SA1721RTE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: PNP Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 300V Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 20mA, 10V Power - Max: 150mW Frequency - Transition: 50MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	1000 Order	1+: $0
SSM3J112TULF-ND	SSM3J112TU,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active FET Type: P-Channel Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25C: 1.1A (Ta) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Rds On (Max) @ Id, Vgs: 390 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id: 1.8V @ 100A Vgs (Max): 20V Input Capacitance (Ciss) (Max) @ Vds: 86pF @ 15V Power Dissipation (Max): 800mW (Ta) Operating Temperature: 150C Mounting Type: Surface Mount Supplier Device Package: UFM Package / Case: 3-SMD, Flat Leads	1000 Order	3000+: $0.0643
CCS15S30L3FTR-N D	CCS15S30,L3F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Type: Schottky Voltage - DC Reverse (Vr) (Max): 20V Current - Average Rectified (Io): 1.5A Voltage - Forward (Vf) (Max) @ If: 400mV @ 1A Speed: Fast Recovery = 200mA (Io) Current - Reverse Leakage @ Vr: 500A @ 30V Capacitance @ Vr, F: 200pF @ 0V, 1MHz Mounting Type: Surface Mount Package / Case: 0603 (1608 Metric) Supplier Device Package: CST2C Operating Temperature - Junction: 125C (Max)	1000 Order	10000+: $0.0461 30000+: $0.0432 50000+: $0.0397
1SS398TE85LFTR- ND	1SS398TE85LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Diode Configuration: 1 Pair Series Connection Diode Type: Standard Voltage - DC Reverse (Vr) (Max): 400V Current - Average Rectified (Io) (per Diode): 100mA Voltage - Forward (Vf) (Max) @ If: 1.3V @ 100mA Speed: Small Signal = Reverse Recovery Time (trr): 500ns Current - Reverse Leakage @ Vr: 100nA @ 400V Operating Temperature - Junction: 125C (Max) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Supplier Device Package: S-Mini	3000 Order	3000+: $0.0917
TA7291PO-ND	TA7291P(O)	Toshiba Semiconductor and Storage	View more Packaging: Tube Part Status: Active Motor Type - AC, DC: Brushed DC Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (2) Interface: Parallel Technology: Bipolar Applications: General Purpose Current - Output: 1A Voltage - Supply: 4.5 V ~ 20 V Voltage - Load: 0 V ~ 20 V Operating Temperature: -30C ~ 75C (TA) Mounting Type: Through Hole Package / Case: 10-SIP Exposed Tab Supplier Device Package: 10-HSIP Base Part Number: TA7291	1000 Order	1+: $0
TB6633FNGEL-ND	TB6633FNG,EL	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Motor Type - AC, DC: Brushless DC (BLDC) Function: Driver - Fully Integrated, Control and Power Stage Output Configuration: Half Bridge (3) Interface: Analog Technology: Power MOSFET Applications: General Purpose Current - Output: 1A Voltage - Supply: 5.5 V ~ 22 V Voltage - Load: 5.5 V ~ 22 V Operating Temperature: -40C ~ 85C (TA) Mounting Type: Surface Mount Package / Case: 24-LSSOP (0.154", 3.90mm Width) Supplier Device Package: 24-SSOP	1000 Order	1+: $0
TLP290(GR-TPE)T R-ND	TLP290(GR-TP,E)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Number of Channels: 1 Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Current Transfer Ratio (Max): 300% @ 5mA Turn On / Turn Off Time (Typ): 7s, 7s Rise / Fall Time (Typ): 4s, 7s Input Type: AC, DC Output Type: Transistor Voltage - Output (Max): 80V Current - Output / Channel: 50mA Voltage - Forward (Vf) (Typ): 1.25V Current - DC Forward (If) (Max): 50mA Vce Saturation (Max): 300mV Operating Temperature: -55C ~ 110C Mounting Type: Surface Mount Package / Case: 4-SOIC (0.179", 4.55mm Width) Supplier Device Package: 4-SO	1000 Order	1+: $0
RN4982FELF(CBTR -ND	RN4982FE,LF(CB	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1): 10 kOhms Resistor - Emitter Base (R2): 10 kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 5V Vce Saturation (Max) @ Ib, Ic: 300mV @ 250A, 5mA Current - Collector Cutoff (Max): 100nA (ICBO) Frequency - Transition: 250MHz Power - Max: 100mW Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	4000+: $0.0304 8000+: $0.0265 12000+: $0.0225 28000+: $0.0212 100000+: $0.0176
MT3S20P(TE12LF) TR-ND	MT3S20P(TE12L,F )	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Voltage - Collector Emitter Breakdown (Max): 12V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.45dB @ 1GHz Gain: 16.5dB Power - Max: 1.8W DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 50mA, 5V Current - Collector (Ic) (Max): 80mA Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: TO-243AA Supplier Device Package: PW-MINI	1000 Order	1+: $0
HN4A06J(TE85LF) CT-ND	HN4A06J(TE85L,F )	Toshiba Semiconductor and Storage	View more Packaging: Cut Tape (CT) Part Status: Discontinued at Digi-Key Transistor Type: 2 PNP (Dual) Matched Pair, Common Emitter Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 300mW Frequency - Transition: 100MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-74A, SOT-753 Supplier Device Package: SMV	1000 Order	1+: $0
HN2A01FE-Y(TE85 LFTR-ND	HN2A01FE-Y(TE85 L,F	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Obsolete Transistor Type: 2 PNP (Dual) Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 300mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SOT-563, SOT-666 Supplier Device Package: ES6	1000 Order	1+: $0
HN1C03F-B(TE85L F)TR-ND	HN1C03F-B(TE85L ,F)	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: 2 NPN (Dual) Current - Collector (Ic) (Max): 300mA Voltage - Collector Emitter Breakdown (Max): 20V Vce Saturation (Max) @ Ib, Ic: 100mV @ 3mA, 30mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 4mA, 2V Power - Max: 300mW Frequency - Transition: 30MHz Operating Temperature: 150C (TJ) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Supplier Device Package: SM6	1000 Order	1+: $0
2SC4117-BLLFTR- ND	2SC4117-BL,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 120V Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 100MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0259 6000+: $0.0225 15000+: $0.0191 30000+: $0.018 75000+: $0.0169 150000+: $0.015
2SC4116-BLLFTR- ND	2SC4116-BL,LF	Toshiba Semiconductor and Storage	View more Packaging: Tape & Reel (TR) Part Status: Active Transistor Type: NPN Current - Collector (Ic) (Max): 150mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 350 @ 2mA, 6V Power - Max: 100mW Frequency - Transition: 80MHz Operating Temperature: 125C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Supplier Device Package: USM	1000 Order	3000+: $0.0202 6000+: $0.0183 15000+: $0.0159 30000+: $0.0143 75000+: $0.0127 150000+: $0.0106

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