SI9945BDY-T1-GE3 Discrete Semiconductor Products |
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Allicdata Part #: | SI9945BDY-T1-GE3TR-ND |
Manufacturer Part#: |
SI9945BDY-T1-GE3 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 60V 5.3A 8-SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 5.3A 3.1W Surf... |
DataSheet: | SI9945BDY-T1-GE3 Datasheet/PDF |
Quantity: | 32500 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 5.3A |
Rds On (Max) @ Id, Vgs: | 58 mOhm @ 4.3A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | 665pF @ 15V |
Power - Max: | 3.1W |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI9945 |
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SI9945BDY-T1-GE3, also known as an N-channel logic level enhancement mode field effect transistor (FET), is a semiconductor that is commonly used in applications such as logic level shifting and protection. It is also used in analog switches and multiplexers, as well as power amplifiers and high capacitance loads. This FET can be used in a variety of applications, including commercial products, consumer products, military applications, aerospace and industrial equipment.
The SI9945BDY-T1-GE3 has a metal-oxide-semiconductor structure, with a gate connected to the substrate by an insulation layer and a metal gate electrode. The gate is connected to the source and drain regions, which consist of a source-to-drain conductive channel formed between the source and drain regions. The source and drain regions are connected to an external circuit through metal source and drain electrodes.
The most important characteristics of the SI9945BDY-T1-GE3 are its high speed switching performance, low power consumption and robustness in operation. The device is capable of switching from one logic level to another in less than 10ns. This greatly reduces the time needed for data processing and various control applications. The low current characteristics of the FET also help to minimize power consumption and extend its service life, as well as its robustness in operation. The FET has a very low leakage current, which makes it suitable for applications which require very low power and high speed operation.
The SI9945BDY-T1-GE3 also features low-on resistance, low-off capacitance and low-input capacitance, making it ideal for high-frequency applications. The device also features high-voltage operation, making it suitable for higher voltage applications such as automotive electronic systems. Moreover, the SI9945BDY-T1-GE3 has a relatively low gate input and output capacitance, enabling efficient AC coupling and high speed operation.
The SI9945BDY-T1-GE3 is available in a variety of packages and can be easily mounted on a printed circuit board (PCB). It is also compatible with standard surface-mount technology, making it ideal for use in a variety of applications. The device can handle higher voltage supply and provides greater protection for sensitive components.
The SI9945BDY-T1-GE3 is widely used in the automotive, consumer electronics, medical and aerospace industries. It is suitable for a range of applications, including audio processing, communication and digital signal processing. It is also used in power amplifiers, motor controllers, and power management circuits.
The SI9945BDY-T1-GE3 is designed to enable the connection of logic circuits to enable logic level shifting and protection, as well as providing enhanced switching performance in a variety of applications. The device is designed to ensure reliable operation over a wide temperature range and is capable of handling high-voltage load currents. It is also designed to provide a high-speed switching performance and a low-power consumption to enable the design of a highly efficient power supply.
The SI9945BDY-T1-GE3 is an excellent choice for designers looking to integrate advanced capabilities into their circuits. It is compatible with a wide range of applications and also offers robust operation and low power consumption. With its variety of packages and features, the SI9945BDY-T1-GE3 is suitable for a multitude of applications.
The specific data is subject to PDF, and the above content is for reference
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