SI9926CDY-T1-GE3 Discrete Semiconductor Products

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI9926CDY-T1-GE3 is a transistor Array developed by Vishay Siliconix for high voltage Motor Control applications. It is a monolithic CMOS device comprising of two N-channel MOSFET cells in depletion mode that are connected in parallel and controlled by a single gate input. This makes the device ideal for applications where high voltage and high current are a priority such as in motor control applications.

The transistor array is composed of two main components, the source and the drain. The source and the drain are the two contacts of the transistor array through which current flows when the gate voltage is applied. The source is the positive terminal, and the drain is the negative terminal. When the gate voltage is applied it allows for current to flow from the source to the drain.

The current that flows between the source and the drain is controlled by the gate voltage. This voltage is applied to the gate after the device has been turned on with a digital signal. The gate voltage determines the amount of current flowing through the transistor array and is directly proportional to its drain current. In other words, the greater the gate voltage, the greater the current through the transistor array.

The other important parameter is the breakdown voltage. This is the voltage at which the transistor starts conducting and begins to draw a large amount of current. The breakdown voltage of the SI9926CDY-T1-GE3 is specified at 60V and it is important to ensure that the gate voltage does not exceed this voltage.

The SI9926CDY-T1-GE3 is particularly suitable for motor control applications as it is a high-voltage device and can tolerate high current. It is also suitable for pulse-width modulation applications as the device can be easily programmed to provide accurate current control. The device is also capable of providing very low on-resistance making it ideal for applications where current draw has to be minimized.

In summary, the SI9926CDY-T1-GE3 is a high-voltage, high-current transistor array ideal for motor control applications. It is composed of two N-channel MOSFET cells in depletion mode and is controlled by a single gate input. The current that flows between the source and the drain is proportional to the gate voltage and is limited by the breakdown voltage of the device.

The specific data is subject to PDF, and the above content is for reference