SI9936BDY-T1-GE3

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

The SI9936BDY-T1-GE3 is a small signal MOSFET array that is used in many applications. It is a high voltage, low power, low cost, general purpose array of eight N-Channel MOSFETs. This array has high levels of uniformity, including a low gate charge and a low Rds range. It operates on a single supply voltage and offers superior performance over other analog arrays.

The SI9936BDY-T1-GE3 is used in a variety of applications, including power conversion, motor control, audio amplification, and voltage regulation. It is also used as a switching device for automotive and industrial control systems. As an array, it provides superior performance compared to other analog solutions. The device is also RoHS compliant and offers excellent reliability.

The SI9936BDY-T1-GE3 has a minimum VGS of 4V and a maximum VGS of 25V. It has a low input capacitance of 1.4pF. The device has an on-state resistance of 0.08Ω, which is ideal for use in power conversion applications. It has an Rds on rating of 11A continuous and 20A pulsed. The device also offers a low 10mΩ Ron rating, which helps control power dissipation.

The SI9936BDY-T1-GE3 has a breakdown voltage of 25V and a maximum temperature rating of 150°C. The device has a maximum gate charge of 4.8nC at 4V and an inverse breakdown voltage of -25V. It has a total gate charge of 4.8nC and a total gate capacitance of 7.5pF. The device is also optimized for low voltage applications and offers superior on-resistance and threshold voltage characteristics.

The working principle of the SI9936BDY-T1-GE3 is relatively simple. It is a type of field-effect transistor (FET) in which a control electric field is used to control the current flow through a conducting channel. When the input voltage is applied, a capacitance charge is created on the gate terminal. This charge varies the conductivity of the channel and results in a current flow through the channel.

The SI9936BDY-T1-GE3 is a versatile and cost-effective solution for a range of applications. Its low power consumption, low on-resistance, and low gate charge make it ideal for low voltage applications. Its compatibility with various digital control solutions and its superior on-resistance and threshold voltage characteristics also make it an excellent choice for a variety of applications.

The specific data is subject to PDF, and the above content is for reference