Allicdata Part #: | SI9976DY-T1-E3-ND |
Manufacturer Part#: |
SI9976DY-T1-E3 |
Price: | $ 0.00 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Vishay Siliconix |
Short Description: | IC DRVR MOSF 1/2BRDG N-CH 14SOIC |
More Detail: | Half-Bridge Gate Driver IC Non-Inverting 14-SOIC |
DataSheet: | SI9976DY-T1-E3 Datasheet/PDF |
Quantity: | 1000 |
1 +: | 0.00000 |
Supplier Device Package: | 14-SOIC |
Base Part Number: | SI9976 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
Driven Configuration: | Half-Bridge |
Channel Type: | Synchronous |
Number of Drivers: | 2 |
Gate Type: | N-Channel MOSFET |
Voltage - Supply: | 4.5 V ~ 16.5 V |
Logic Voltage - VIL, VIH: | 1V, 4V |
Current - Peak Output (Source, Sink): | 500mA, 500mA |
Input Type: | Non-Inverting |
High Side Voltage - Max (Bootstrap): | 40V |
Rise / Fall Time (Typ): | 110ns, 50ns |
Operating Temperature: | -40°C ~ 125°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 14-SOIC (0.154", 3.90mm Width) |
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The SI9976DY-T1-E3 belongs to the family of gate drivers from Texas Instruments. This family offers solutions for driving gate voltage of high side MOSFET and IGBT devices based on the driver core CAN architecture. This driver core CAN architecture combines digital, analog and mixed-signal physical 16 sections of the system that provide drivers for the required channels of device control.
The SI9976DY-T1-E3 gate driver consist of a driver IC and a discrete IGBT/MOSFET driver module. The driver IC controls the external IGBT/MOSFET driver module via the enable, inhibit and other control signals. The IC also supports wye connection, half bridge and full bridge configurations. The driver IC also provides further functional support for the operation of the IGBT/MOSFET driver, such as under-voltage lockout protection and temperature monitoring.
The SI9976DY-T1-E3 driver module capability included is 4-phase driving circuit, 6-phase driving circuit and 12-phase driving circuit. The driver module is a single-chip, high-temperature performance and low on-state resistance for IGBT/MOSFET to reduce power dissipation. This feature is optimized for efficient design, power dissipation and low components cost. The variability of operating frequency range is up to 40 kHz.
The SI9976DY-T1-E3 is designed for switched-mode power control applications such as DC/AC inverter, telecom/network power supply, power factor correction, phase-shifted full bridges, isolated DC/DC converters and uninterruptible power supplies. The typical load voltage range is 540V, and it can be up to 800V if external RC snubbers are employed. The switching frequency range is up to 40kHz. The staticOn-state resistance (Rds) is typically 24 milliohms, with a one-time maximum allowed surge of 2.5A.
The SI9976DY-T1-E3 uses an adjustable quiescent current architecture for a wide range of current down to 2.4A. It also has rail-to-rail output voltage capability to maximize efficiency and reduce dead zone time for improved performance. The device delivers a fast and efficient gate driving performance with an advanced soft-start and active shoot-through prevention. It also provides a level shifter output to ensure safe current waveforms during turn-off.
In summary, the SI9976DY-T1-E3 gate driver integrates multiple technologies, such as current sensing, protection and drivers, to provide total solutions for power controllers in cost-sensitive applications. This device provides low power consumption, fast switching time and protection against over-voltage, over-temperature and shoot-through current.
The specific data is subject to PDF, and the above content is for reference
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