SI9912DY-T1-E3 Allicdata Electronics
Allicdata Part #:

SI9912DY-T1-E3-ND

Manufacturer Part#:

SI9912DY-T1-E3

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Vishay Siliconix
Short Description: IC DRIVER GATE HALF BRIDGE 8SOIC
More Detail: Half-Bridge Gate Driver IC Non-Inverting 8-SOIC
DataSheet: SI9912DY-T1-E3 datasheetSI9912DY-T1-E3 Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Obsolete
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Number of Drivers: 2
Gate Type: N-Channel MOSFET
Voltage - Supply: 4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH: --
Current - Peak Output (Source, Sink): 1A, 1A
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 30V
Rise / Fall Time (Typ): 30ns, 20ns
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Supplier Device Package: 8-SOIC
Base Part Number: SI9912
Description

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XS9912DY-T1-E3 is a precision high-speed gate driver for controlling power MOSFETs and IGBTs, categories in Power Management Integrated Circuit (PMIC) - Gate Drivers. It has in integrated low side MOSFET and is available in TSSOP-14 package.

The main application fields of XS9912DY-T1-E3 are Industrial, Automotive, Telecom/Datacom and Consumer applications. In consumer applications, it can be used in PC power supplies, AC/DC adapters, ORPS, LED Lighting, Smart TV, Power converters and many other related fields. It can also be used in automotive, industrial, energy and other applications for DC-DC synchronous buck converter, current-mode PFC or SMPS.

With low voltage drop of 0.5V, it can operate at 16V to 350V, making it suitable to drive any power MOSFETs and IGBTs, delivering up to 4A peak output current and manages the turn-on and turn-off of the gates. It contains two dedicated pins to define the turn-off, (DEADTIME) and turn-on (CFST) propagation delay times. Undervoltage and overvoltage protection can be enabled using two dedicated pins, UVL and OVL. Other performance features of XS9912DY-T1-E3 include adjustable undervoltage lockout (UVLO), under-voltage lockout hysteresis (UVHYST) and thermal protection.

The XS9912DY-T1-E3 operating principle is very simple. The input (IN_PIN) is connected to the gate of the power MOSFET/IGBT, the gate driver action starts when the trigger signal (TRI_OUT) is applied to the input (IN_PIN). The driver pulses the gate voltage up to the level necessary for the power MOSFET/IGBT to switch ON, and pulls the gate voltage low for the power MOSFET/IGBT turn OFF. Adjust the propagation delay timing between the turn-on and turn-off using the dedicated pins, DEADTIME and CFST, respectively.

The XS9912DY-T1-E3 is an efficient, cost effective and reliable device to control power MOSFETs and IGBTs, making it suitable to drive high current and voltage sources in different applications. It fits well in Industrial, Automotive, Telecom/Datacom and Consumer applications.

The specific data is subject to PDF, and the above content is for reference

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