SI9955DY Allicdata Electronics
Allicdata Part #:

SI9955DYTR-ND

Manufacturer Part#:

SI9955DY

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ON Semiconductor
Short Description: MOSFET 2N-CH 50V 3A 8-SOIC
More Detail: Mosfet Array 2 N-Channel (Dual) 50V 3A 900mW Surfa...
DataSheet: SI9955DY datasheetSI9955DY Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Vgs(th) (Max) @ Id: 1V @ 250µA
Base Part Number: SI9955D
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 900mW
Input Capacitance (Ciss) (Max) @ Vds: 345pF @ 15V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Series: --
Rds On (Max) @ Id, Vgs: 130 mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A
Drain to Source Voltage (Vdss): 50V
FET Feature: Standard
FET Type: 2 N-Channel (Dual)
Part Status: Obsolete
Packaging: Tape & Reel (TR) 
Description

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The SI9955DY field effect transistor (FET) is a specialized component within the general family of transistors. The SI9955DY is an array of transistors suitable for use in a wide range of applications, including audio and power amplification. The detailed operating principles of the SI9955DY are discussed below.

The SI9955DY is an array of N-channel FETs mounted in a dual in-line package (DIP). The SI9955DY has four independent channels, each able to handle up to three amperes of current. This makes the SI9955DY suitable for use in both high-power and low-power applications. The SI9955DY can be used to provide voltage level translation and switching, making it an ideal choice for audio and power amplification.

The operating principles of the SI9955DY can be defined in terms of its input, output and feedback circuits. The input stage amplifies and presents signals to the transistor’s gate. The output stage amplifies and presents signals from the transistor’s drain. The feedback stage provides precise control of the transistor’s output voltage and current, thereby enabling precise control of the transistor’s output.

In order to operate correctly, the input and output circuits of the SI9955DY must be correctly biased relative to each other. This means that an input signal must first be applied to a reference voltage in order to correctly bias the input and output circuits. This is achieved by biasing the input and output circuits relative to one another using linear or non-linear devices.

The SI9955DY also has protection devices to protect the internal elements in the event of over-voltage or over-current conditions. The protection devices monitor the voltage and current levels and shut off the power to the relevant circuit if the voltage or current levels exceed the predetermined thresholds.

In addition to its protection devices, the SI9955DY also has a number of features to improve its performance and reliability. Power Supply Rejection Ratio (PSRR) is one such feature. PSRR is the ratio of power supply noise to the device’s output signal. Higher PSRR values result in lower levels of noise in the output signal.

On-chip thermal shutdown is also a feature of the SI9955DY. This feature monitors device temperature and shuts down the power supply if the temperature exceeds a predetermined threshold. This helps protect the device from damage due to overheating.

The SI9955DY is a versatile array of FETs; its input, output and feedback circuits as well as its protection and performance enhancing features make it suitable for a wide range of audio and power amplification applications. In addition, its on-chip thermal shutdown feature ensures the device’s reliability and protection from overheating.

The specific data is subject to PDF, and the above content is for reference

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