SI9913DY-T1-E3

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Obsolete
Driven Configuration:	Half-Bridge
Channel Type:	Synchronous
Number of Drivers:	2
Gate Type:	N-Channel MOSFET
Voltage - Supply:	4.5 V ~ 5.5 V
Logic Voltage - VIL, VIH:	--
Current - Peak Output (Source, Sink):	1A, 1A
Input Type:	Non-Inverting
High Side Voltage - Max (Bootstrap):	30V
Rise / Fall Time (Typ):	30ns, 20ns
Operating Temperature:	-40°C ~ 125°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package:	8-SO
Base Part Number:	SI9913

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IntroductionThe SI9913DY-T1-E3 is a low power, low jitter, low cost gate driver with integrated logic level pull (LLP) controls. It is ideal for driving high current level loads, as well as for switching between open and closed drain MOSFETs or IGBTs for fast and efficient operations in two and four-phase gate disk applications. It is also capable of supporting a variety of high-speed gate drives that are used in high-current applications such as DC-DC converters and power factor correction. The device is intended for use in the industrial, automotive, HVAC and telecom markets. Application fieldThe SI9913DY-T1-E3 is suitable for a wide range of applications including motor control, DC-DC converters and power factor correction. It has been designed to drive IGBTs and MOSFETs up to 5A or 25V, or can be used as a logic driver for LED backlighting applications. Its low jitter and low power consumption make it an excellent choice for driving switching circuits or in portable electronic devices where ultra-low power consumption is a must. Additionally, its high speed switching capability makes it ideal for high current applications such as DC-DC converters and power factor correction.FeaturesThe SI9913DY-T1-E3 features a power efficient design, allowing for thermal dissipation from up to 10V, along with a built-in charge pump providing constant pull-up current for the logic inputs. It offers integrated protection against shoot-through and shoot-through protection for a reliable operation at high switching frequencies. Additionally, the device is designed to work with a wide range of operating conditions and environmental conditions. It has a wide temperature range of -40C up to 150C and can accommodate 5V to 70V input voltages. The device also offers adjustable dead time and has a built-in regulator to maintain the protection circuitry on chip.Working PrincipleThe SI9913DY-T1-E3 is a full bridge gate driver integrated with logic level pull-up (LLP) control. It provides a low jitter, low power driver for switching between open and closed drain MOSFETs and IGBTs for fast and efficient operations in two- and four-phase gate drive applications. During each drive cycle, the device is enabled by the Enable pin and is supplied with a high voltage gate drive signal from the input side. At the same time, the integrated LLP control maintains the logic level pull-up voltage on the output side. This ensures that no shoot-through current flows in the system during the drive cycle. The device also features a low jitter drive capability, which is enabled by the integrated logic level pull-up voltage and adjustable dead time. This allows the device to deliver fast switching between open and closed drain MOSFETs or IGBTs and prevents any shoot-through current in the system.

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