DTA114EET1G Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	35 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75, SOT-416
Base Part Number:	DTA114

Due to market price fluctuations, if you need to purchase or consult the price. You can contact us or emial to us:   sales@allicdata.com

DTA114EET1G Application Field and Working Principle

The DTA114EET1G is a single, pre-biased, bipolar junction transistor (BJT) from the DTA114 series manufactured by Toshiba. It is a three-terminal device that is generally used in the production of high-frequency transistor logic circuits. The DTA114EET1G operates in a wide range of applications and is optimized for high-speed switching, making it ideal for applications such as RF power amplifiers, gate drivers, and high-speed switching circuits.

Structure of DTA114EET1G

The DTA114EET1G is constructed from an NPN silicon epitaxial layer. It features a pre-biased structure, which enables it to reduce current consumption compared to other conventional transistors. It consists of three terminals – the base, collector, and emitter. The base is typically used to control the flow of current through the other two terminals. The collector is the terminal connected to the load device and is where the majority of current flows through. The emitter is the negative terminal of the transistor and is where the majority of the current enters through.

Working Principle of DTA114EET1G

The DTA114EET1G works through the action of minority carriers, which are electrons and holes. If a positive voltage is applied to the base, the electrons in the base are attracted towards it and as a result become depleted from the N-type material near the junction, creating what is known as a depletion region. This depletion region acts as a barrier for charge, blocking current from flowing from the collector to the emitter until a certain voltage is applied. If a voltage difference is applied across the collector-emitter terminals of a transistor, current will flow from the collector to the emitter.

Characteristic of DTA114EET1G

The DTA114EET1G offers a number of advantages over similar transistors. It has a high dc current gain of 110, enabling efficient power amplification. It also has a high-speed switching capability of 6GHz, making it suitable for use with high-frequency circuits. Moreover, the device also features a low collector-emitter saturation voltage of 0.3V and 0.5V, allowing it to deliver high switching speeds without the need for additional amplification stage.

Applications

The DTA114EET1G is ideal for a range of applications, such as RF power amplifiers, gate drivers, and high-speed switching circuits. These applications require fast switching speeds and efficient power amplification, both of which the DTA114EET1G can provide. It is also suited for use in small size and low power devices, such as portable radios and digital cameras.

Conclusion

The DTA114EET1G is a single pre-biased bipolar junction transistor (BJT) from the DTA114 series. It offers a range of advantages, such as a high dc current gain of 110 and a fast switching speed of 6GHz. It is suitable for use in RF power amplifiers, gate drivers, and high-speed switching circuits, as well as for low power and small size devices, such as portable radios and digital cameras.

The specific data is subject to PDF, and the above content is for reference

Part Number	Manufacturer	Price	Quantity	Description