Allicdata Part #: | DTA123JKAT146TR-ND |
Manufacturer Part#: |
DTA123JKAT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA123JKAT146 Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 2.2 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTA123 |
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The DTA123JKAT146 is a type of single pre-biased bipolar junction transistor (BJT). This kind of BJT provides efficient performance due to its low voltage drop, which allows it to be used in a wide range of power electronics applications.
The DTA123JKAT146 has a current gain of 80-140 in CB configuration, and 45-85 in CC configurations. It also has a high DC current gain of 10-100 mA. The junction temperature of this device is 125°C.
The device is designed to be pre-biased, meaning that it is intended to operate in an environment where it is already supplying current and voltage. This allows the device to save power and reduce the power dissipated into the environment. It also allows the device to start operating at a lower voltage without the need for an external voltage drop device.
The DTA123JKAT146 also has a built-in protection against reverse establishment of capacity so that it can be used in environments where the power source is in reverse polarity. Likewise, it has a wide frequency range, allowing it to be used in applications where high frequencies are needed.
In terms of its application field, the DTA123JKAT146 is mainly used in low-power switch-mode power supplies, as well as in battery-powered devices where low voltage drop is required. It is also used in battery charge controllers, LED lighting, and DC-DC converters.
In terms of its working principle, the DTA123JKAT146 operates on the basis of a base-collector diode. When current is applied to the base-collector diode, it creates a voltage drop; this voltage drop, in turn, creates an electric field, which induces a current into the collector-base junction. This current is then amplified and is the main current which is used in power electronics applications.
The voltage drop created by the device is also used to regulate the current in the device, thus allowing it to operate with a constant voltage source. It is also used for voltage regulation, allowing it to provide a steady output voltage in various applications.
In summary, the DTA123JKAT146 is a type of single pre-biased bipolar junction transistor (BJT). It has a current gain of 80-140 in CB configuration, and 45-85 in CC configurations. It also has a high DC current gain of 10-100 mA. The device operates on the basis of a base-collector diode, creating an electric field which is used to induce current and regulate voltage. The DTA123JKAT146 is mainly used in low-power switch-mode power supplies, battery-powered devices, battery charge controllers, LED lighting, and DC-DC converters.
The specific data is subject to PDF, and the above content is for reference
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