Allicdata Part #: | DTA114YUAT106TR-ND |
Manufacturer Part#: |
DTA114YUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114YUAT106 Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | DTA114 |
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The DTA114YUAT106 is an advanced bipolar junction transistor (BJT) with a single pre-biased configuration. It is specifically designed for ultra-high frequency applications from several hundred MHz to over 3 GHz. These devices offer superior performance over standard BJTs, and have many advantages including a low turn-on voltage that is not affected by temperature, low noise and higher gain when used in comparison to other BJTs. This article seeks to provide a detailed overview of the application field and working principle of the DTA114YUAT106.
BJTs are mainly used in amplifiers, converters, switches and filters. Of these, the BJT is most commonly used as a switch, since it can be easily turned on and off with a simple voltage transition, and even when in an off-state there is minimal power dissipation. However, when used as an amplifier the BJT is prone to distortion and non-linearity due to crossover effects, making it much less efficient. As such, it is better to use more advanced BJTs such as the DTA114YUAT106 for this purpose.
Further, BJTs are classified according to their base-emitter voltage. The DTA114YUAT106 is a “pre-biased” BJT, meaning it requires a minimum voltage to turn on, typically between 0.4 and 0.6 volts. This is advantageous for high frequency applications, as it reduces the influence of noise on the output, which is a significant issue with traditional BJTs that require a much higher voltage.
The working principle of the DTA114YUAT106 is based on a diode-to-transistor mechanism. When a small voltage is applied to the BJT’s base, it forms a rectifying junction between the emitter and base known as a “diode-connected” junction. The built-in bias voltage is then added to the base-emitter voltage, forming an amplifier with the emitter voltage held at a constant. This amplifier can then be used to amplify the input voltage to a higher level.
The key advantage of the DTA114YUAT106 is in its ultra-high frequency performance. When compared to other BJTs, this device has an increased gain and significantly lower noise. Additionally, the DTA114YUAT106 can operate at frequencies up to 3GHz, which makes it suitable for use in modern wireless applications such as Wifi, Bluetooth and LTE. This is a huge improvement over standard BJTs, which are limited to operation at much lower frequencies.
In conclusion, the DTA114YUAT106 is an advanced single pre-biased bipolar junction transistor that is perfectly suited for ultra-high frequency applications. It offers superior performance compared to standard BJTs, with a much higher gain and much lower noise. It is especially useful for use in modern wireless applications, such as Wifi, Bluetooth and LTE, as it has excellent frequency response and can operate up to 3GHz. This makes it one of the best choices for high-frequency amplification, switching or filtering.
The specific data is subject to PDF, and the above content is for reference
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