DTA114YET1G

Series:	--
Packaging:	Tape & Reel (TR)
Lead Free Status / RoHS Status:	--
Part Status:	Active
Moisture Sensitivity Level (MSL):	--
Transistor Type:	PNP - Pre-Biased
Current - Collector (Ic) (Max):	100mA
Voltage - Collector Emitter Breakdown (Max):	50V
Resistor - Base (R1):	10 kOhms
Resistor - Emitter Base (R2):	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:	80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic:	250mV @ 300µA, 10mA
Current - Collector Cutoff (Max):	500nA
Power - Max:	200mW
Mounting Type:	Surface Mount
Package / Case:	SC-75, SOT-416
Supplier Device Package:	SC-75, SOT-416
Base Part Number:	DTA114

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Introduction

DTA114YET1G is an N-channel enhancement mode MOSFET transistor developed and manufactured by STMicroelectronics. It is often found in power integrated circuits (ICs) and digital circuits, where fast-switching capability and performance are of utmost importance. This article will discuss the application field and working principle of the DTA114YET1G transistor.

Application Field

The DTA114YET1G is used in applications where a fast-switching high-voltage MOSFET is needed. It is ideal for use in power integrated circuits because it has a low threshold voltage, low gate charge, and low output capacitance. It is also suitable for switching applications that require high noise immunity. With its high-current carrying capability and wide temperature range, the DTA114YET1G is suitable for use in high-power designs that may be subject to extreme environmental conditions.The DTA114YET1G transistor can be used in a variety of applications, from switching power supplies and battery chargers to audio amplifiers and delay circuits. It is also suitable for use in portable electronic devices, as well as automotive, industrial and consumer electronic applications.

Working Principle

The DTA114YET1G is a pre-biased transistor, meaning that it needs a small amount of bias current to turn on. The device consists of an N channel MOSFET connected in series with a diode. When a positive voltage is applied to the gate, the MOSFET turns on, allowing current to flow through the drain and source terminals. As the drain current increases, so does the voltage on the diode, which begins to conduct and increases the voltage on the gate, thus keeping the transistor in an ‘on’ state. When the voltage is removed from the gate, the MOSFET begins to turn off. The diode connected to the gate then begins to conduct, allowing current to flow and the voltage on the gate to drop. This turns the MOSFET off, preventing any current from flowing through it.

Conclusion

The DTA114YET1G is a popular choice for power IC and digital circuit applications that demand fast switching performance. Its low threshold voltage and low gate charge provide an ideal combination for switching applications that require high noise immunity. Its pre-biased nature allows it to remain in an ‘on’ state even when the gate voltage is removed, making it an ideal choice for applications that require a reliable and long-term performance.

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