Allicdata Part #: | DTA143XUBTLTR-ND |
Manufacturer Part#: |
DTA143XUBTL |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3F |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143XUBTL Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 10 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-85 |
Supplier Device Package: | UMT3F |
Base Part Number: | DTA143 |
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The DTA143XUBTL from STMicroelectronics is a single, pre-biased, bipolar (BJT) transistor. The device\'s main application field is switching and amplification in low-voltage, low-power electronic circuit applications.
The device is fabricated using an advanced CMOS process, providing superior immunity to ESD, and enhanced robustness against ambient temperature and supply voltage variations, making it suitable for automotive applications. The DTA143XUBTL is designed for use as a switch, a driver circuit, or a power amplifier in portable and handheld devices, automotive products, battery powered devices, and various industrial applications.
The DTA143XUBTL transistor consists of three terminals: base, collector, and emitter. It is constructed from a single-layer of semiconductor material between two aligned transistor source regions. It works in the same way as a regular BJT - current is applied to the Base, causing the Collector-Emitter current to flow. Output is taken from the Collector. This process is repeated over and over, allowing the transistor to amplify the input signal.
The device uses an NPN junction transistor as the active element and is pre-biased, allowing it to start conducting as soon as it is supplied with power. This makes it ideal for low-power applications where the power requirements are minimal. Its relatively low power consumption makes it suitable for battery operated devices and other applications where power conservation is important.
The DTA143XUBTL is a low operating voltage device, able to operate at voltage levels as low as 1.8V, allowing it to be used in various low-voltage applications. It features a low saturation voltage of 1.2V which helps reduce power losses, as well as a large current gain (α) of 2.4. It also offers excellent switching performance, making it suitable for various switching and amplification applications.
The DTA143XUBTL overcomes the limitations of traditional bipolar transistors, offering superior performance and reliability at low cost. It is a great choice for various low voltage, low power applications, from portable and handheld devices to automotive products and other industrial applications. With its low operating voltage and power consumption, as well as its excellent switching performance and oversized current gain, this device is a great choice for many projects.
The specific data is subject to PDF, and the above content is for reference
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