DTA143XUBTL Allicdata Electronics
Allicdata Part #:

DTA143XUBTLTR-ND

Manufacturer Part#:

DTA143XUBTL

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW UMT3F
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA143XUBTL datasheetDTA143XUBTL Datasheet/PDF
Quantity: 3000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 3000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Not For New Designs
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 10 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-85
Supplier Device Package: UMT3F
Base Part Number: DTA143
Description

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The DTA143XUBTL from STMicroelectronics is a single, pre-biased, bipolar (BJT) transistor. The device\'s main application field is switching and amplification in low-voltage, low-power electronic circuit applications.

The device is fabricated using an advanced CMOS process, providing superior immunity to ESD, and enhanced robustness against ambient temperature and supply voltage variations, making it suitable for automotive applications. The DTA143XUBTL is designed for use as a switch, a driver circuit, or a power amplifier in portable and handheld devices, automotive products, battery powered devices, and various industrial applications.

The DTA143XUBTL transistor consists of three terminals: base, collector, and emitter. It is constructed from a single-layer of semiconductor material between two aligned transistor source regions. It works in the same way as a regular BJT - current is applied to the Base, causing the Collector-Emitter current to flow. Output is taken from the Collector. This process is repeated over and over, allowing the transistor to amplify the input signal.

The device uses an NPN junction transistor as the active element and is pre-biased, allowing it to start conducting as soon as it is supplied with power. This makes it ideal for low-power applications where the power requirements are minimal. Its relatively low power consumption makes it suitable for battery operated devices and other applications where power conservation is important.

The DTA143XUBTL is a low operating voltage device, able to operate at voltage levels as low as 1.8V, allowing it to be used in various low-voltage applications. It features a low saturation voltage of 1.2V which helps reduce power losses, as well as a large current gain (α) of 2.4. It also offers excellent switching performance, making it suitable for various switching and amplification applications.

The DTA143XUBTL overcomes the limitations of traditional bipolar transistors, offering superior performance and reliability at low cost. It is a great choice for various low voltage, low power applications, from portable and handheld devices to automotive products and other industrial applications. With its low operating voltage and power consumption, as well as its excellent switching performance and oversized current gain, this device is a great choice for many projects.

The specific data is subject to PDF, and the above content is for reference

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