Allicdata Part #: | DTA143EKAT146TR-ND |
Manufacturer Part#: |
DTA143EKAT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143EKAT146 Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTA143 |
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The DTA143EKAT146 is a single pre-biased bipolar junction transistor (BJT). It is designed to provide high performance and reliable operation in a wide range of applications. The transistor exhibits a low on-state voltage drop and low thermal resistance for high efficiency. It is also designed to offer low-noise operation and high current-handling capability.
The DTA143EKAT146 is a NPN type BJT, with a current gain of 300 at a collector current of 10mA. It has a forward voltage at 25°C of 1.14V and a maximum collector-emitter saturation voltage of 1.1V. The maximum power dissipation is 220mW when the junction temperature is 25°C. It also has a low thermal resistance of 1.8°C/mW. The device also has a maximum collector current capacity of 150mA.
The DTA143EKAT146 is designed for use in applications such as audio amplifiers, cable drivers, small signal amplifiers, and various types of linear and switching circuits. It is well suited for high-frequency operations, allowing for high-speed switching at frequencies up to 3.2GHz. It is also used in high-precision amplifiers, where its low noise characteristics are essential.
The working principle of the DTA143EKAT146 is based on the concept of a junction between two different semiconductor materials, an N-type and a P-type. In a BJT, the two materials are connected with a preferential current flow between them, which is controlled by the voltage applied to the base. As the voltage applied to the base increases, electrons move from the N-type material to the P-type material, with the flow of current increasing exponentially. As the voltage is adjusted, the current flowing through the transistor can be decreased or increased, allowing the user to control the output current.
The DTA143EKAT146 is designed for use in a variety of applications, providing high performance in all of them. Its low on-state voltage drop and low thermal resistance provide high efficiency, while its low-noise operation and high current-handling capability make it well suited for high-precision amplifiers. With its wide frequency range and high-speed switching capabilities, the DTA143EKAT146 is an ideal choice for a wide range of applications.
The specific data is subject to PDF, and the above content is for reference
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