DTA115EKAT146 Discrete Semiconductor Products |
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Allicdata Part #: | DTA115EKAT146TR-ND |
Manufacturer Part#: |
DTA115EKAT146 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW SMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA115EKAT146 Datasheet/PDF |
Quantity: | 15000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 20mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 100 kOhms |
Resistor - Emitter Base (R2): | 100 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 82 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 250µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | TO-236-3, SC-59, SOT-23-3 |
Supplier Device Package: | SMT3 |
Base Part Number: | DTA115 |
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The DTA115EKAT146 single pre-biased transistor is an integrated device designed for circuit protection and power control applications. It is an NPN bipolar junction transistor (BJT) with integrated ESD and temperature protection, designed especially for use in the DIN rail and snap-in applications. It offers high-speed switching and protection from voltage surges, overloads, and short circuits. It has a rated operating collector current of 3.2mA. The transistor also features an integrated reverse-biasing Schottky diode, ESD protection, and a Zener diode.
The DTA115EKAT146 is a general-purpose transistor that can be used in a wide range of applications. It is suitable for applications such as circuit protection, voltage regulation, and frequency control in radios, televisions, and audio equipment. It is also used in medical applications, including medical diagnostic equipment, medical imaging systems, and patient monitoring systems.
The working principle of the DTA115EKAT146 is based on the NPN transistor structure. The transistor has three terminals: the collector (C), base (B), and emitter (E). When a bias voltage is applied to the base terminal, current is induced in the collector-emitter junction, and a conduction channel is formed between the collector and the emitter. This allows current to flow between the collector and emitter, resulting in amplification of the signal.
The integrated ESD protection in the DTA115EKAT146 helps to protect the device from electrostatic discharge. The Zener diode provides reverse-biasing protection, which helps to keep the transistor from becoming saturated in the event of an overload or short circuit. The integrated temperature protection helps to prevent damage from overheating. The operating temperature ranges from -55°C to +125°C.
The DTA115EKAT146 is a reliable and efficient transistor for a variety of applications. It has a compact size, making it suitable for miniaturized circuits. It is widely used in consumer and industrial electronics, including motor control, audio equipment, and computer systems. The integrated protection from ESD, overloads, and temperature makes this particular transistor particularly suitable for high-reliability applications.
The specific data is subject to PDF, and the above content is for reference
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