DTA114TETL Allicdata Electronics
Allicdata Part #:

DTA114TETLTR-ND

Manufacturer Part#:

DTA114TETL

Price: $ 0.05
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 150MW EMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114TETL datasheetDTA114TETL Datasheet/PDF
Quantity: 18000
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
1 +: $ 0.05000
10 +: $ 0.04850
100 +: $ 0.04750
1000 +: $ 0.04650
10000 +: $ 0.04500
Stock 18000Can Ship Immediately
$ 0.05
Specifications
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
Base Part Number: DTA114
Supplier Device Package: EMT3
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Power - Max: 150mW
Frequency - Transition: 250MHz
Current - Collector Cutoff (Max): 500nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Series: --
Resistor - Base (R1): 10 kOhms
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Transistor Type: PNP - Pre-Biased
Moisture Sensitivity Level (MSL): --
Part Status: Active
Lead Free Status / RoHS Status: --
Packaging: Tape & Reel (TR) 
Description

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The DTA114TETL is a single pre-biased bipolar transistor (BJT) device. It is designed to be used in applications that require high frequency performance and the flexibility of a pre-biased configuration. It is ideal for use in AC or DC circuits, and is available in both NPN and PNP configurations.

The DTA114TETL is specially designed for use in radio frequency (RF) applications. It is capable of high-speed operation with low input current and low noise. Its pre-bias feature allows the device to be switched from one state to another with minimal delay. Its high-frequency operation and low-noise characteristics make it suitable for use in a wide range of RF applications.

The DTA114TETL is a bipolar transistor and has two terminals, the Base and the Collector. The Base is the control terminal that is used to modulate the device\'s output, while the Collector is the output terminal. The device is designed with an internal base resistor, which is connected to the circuit’s ground and is used to control the current flow. The device works in three states: Saturation, Cut-off, and Active.

In Saturation mode, the current flowing from the Collector to the ground is maximized. This is achieved by driving the Base-Emitter junction with a forward bias current. In Cut-off mode, the Base-Emitter junction is reverse biased, causing the device to be completely shut off. Lastly, in Active mode, the device is operated with its internal bias resistor and is used to control the current flow from the collector to the ground.

The DTA114TETL is designed to provide fast switching times. It is also designed for use in high frequency applications, such as signal transmission, signal processing and amplification. The device has a wide-range of operation temperatures and is designed to survive harsh environmental conditions. It is also capable of handling large signal voltages and power dissipation levels. The device is available in a wide range of configurations, such as NPN and PNP, and it is also capable of operating in push-pull configurations. It is available in a variety of package sizes, such as Surface Mount and Through Hole.

The DTA114TETL is a reliable and cost-effective device for use in RF applications. Its Pre-biasing feature allows for fast switching times, and its low noise characteristics make it suitable for signal transmission and amplification. The device is available in a wide range of configurations, and its wide temperature range allows the device to be used in a variety of environments. The device is capable of operating with high signal voltages and power dissipation levels, and is capable of operating in push-pull configurations.

The specific data is subject to PDF, and the above content is for reference

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