Allicdata Part #: | DTA143EUAT106TR-ND |
Manufacturer Part#: |
DTA143EUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA143EUAT106 Datasheet/PDF |
Quantity: | 3000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 30 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | DTA143 |
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The DTA143EUAT106 is a single, pre-biased bipolar transistor (BJT) specifically designed for use in electronic equipment like radios, televisions, and other consumer electronics. It can operate in either amplifier or switching applications. This device is made of an NPN (negative-positive-negative) semiconductor structure, with a collector-base plus an emitter-base region. The transistor is pre-biased, meaning it is already in a given biasing state when acquired, which can be used to facilitate an immediate start-up for the device.
The DTA143EUAT106 has a total power rating of 2W and features a maximum collector current of 800mA. It has a forward current gain (h fe) of 50 to 150 at a collector current of 10mA and a nominal operating frequency of 500kHz. The device also features built-in temperature protection in case of thermal stress. For example, when a temperature of +125°C is reached, the maximum current rating of the device is reduced to 50mA.
In general, the primary use of the DTA143EUAT106 is in amplifier applications. It is particularly useful in low-noise, low-power radio and television receivers, where it can serve as a low-distortion amplifier providing gain values from 20 to 40. Another common use for this transistor is in switching applications, where it can control the flow of current in a circuit. As with many switching applications, the DTA143EUAT106 can act as a switch for both digital and analog signals.
The DTA143EUAT106 operates by relying on the field effect of P-N-P junctions to control the current flow. When the base is forward bias, current flow is driven from the collector to the emitter along the path of least resistance. This is what allows the transistor to act as an amplifier and/or switch. By adjusting the voltage applied to the base, the current between the emitter and collector can be regulated.
The DTA143EUAT106 utilizes a three-leg semiconductor structure for additional stability and safety. The three legs act together to balance out any potential process variations, meaning that the device won’t be impacted by any sudden shifts in temperature or voltage. This also helps to ensure the longevity of the device and its performance.
In conclusion, the DTA143EUAT106 is an ideal choice for any consumer electronics that require a reliable, low-noise, low-power amplifier or switch. It features a pre-biased design and various temperature protection features to ensure the safety and longevity of the device. Its use of the P-N-P junction is what makes it an optimal choice for both amplifier and switching applications.
The specific data is subject to PDF, and the above content is for reference
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