Allicdata Part #: | DTA124XUAT106TR-ND |
Manufacturer Part#: |
DTA124XUAT106 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 200MW UMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA124XUAT106 Datasheet/PDF |
Quantity: | 9000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Active |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 50mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 22 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 68 @ 5mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 200mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-70, SOT-323 |
Supplier Device Package: | UMT3 |
Base Part Number: | DTA124 |
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The DTA124XUAT106 is an NPN silicon pre-biased transistor commonly used in a variety of electrical applications. This transistor is often referred to as a single pre-biased transistor and utilizes the properties of both bipolar junction transistors (BJT) and MOSFET transistors. It is important to note that this type of transistor is not a true silicon pre-biased MOSFET. The DTA124XUAT106 is built to handle up to 100mA of collector current and is suitable for low power switching and amplifier applications. Its forward-biased base-emitter voltage of 1.4 V makes it ideal for low voltage applications. In addition, it has an extremely low on-state conduction loss of just 0.1 ohms. This provides excellent current handling capabilities and enhances system efficiency.The working principle of the DTA124XUAT106 is simple to explain. The transistor works by creating an electrical charge between the emitter and collector. When the emitter receives a positive charge, it will permit a current to pass to the collector. Conversely, a negative charge on the emitter will block the current from reaching the collector. This type of transistor is typically used in either switching applications or as a low power amplifier.In terms of its applications, the DTA124XUAT106 is an incredibly versatile transistor. Its low power consumption and low on-state conduction loss make it an excellent choice for use in a variety of low-voltage applications. It’s often used as a switch in control circuits, robotics, and other embedded systems. It can also be used for general-purpose amplifier applications, as its low power consumption allows for increased efficiency and reliability. Additionally, its pre-biased base-emitter voltage of 1.4 V makes it an ideal choice for use in automotive circuits.In conclusion, the DTA124XUAT106 is a single pre-biased transistor that utilizes the properties of both bipolar junction transistors and MOSFET transistors. It is built to handle up to 100mA of collector current and is suitable for use in low power switching and amplifier applications. Its low power consumption and low on-state conduction loss make it an ideal choice for a variety of applications, such as control circuits, robotics, automotive circuits, and general-purpose amplifiers. As such, it is a versatile and reliable transistor that is well suited to a variety of electrical applications.
The specific data is subject to PDF, and the above content is for reference
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