Allicdata Part #: | DTA114WETLTR-ND |
Manufacturer Part#: |
DTA114WETL |
Price: | $ 0.06 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | ROHM Semiconductor |
Short Description: | TRANS PREBIAS PNP 150MW EMT3 |
More Detail: | Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias... |
DataSheet: | DTA114WETL Datasheet/PDF |
Quantity: | 1000 |
Lead Free Status / RoHS Status: | Lead free / RoHS Compliant |
Moisture Sensitivity Level (MSL): | 1 (Unlimited) |
3000 +: | $ 0.05477 |
6000 +: | $ 0.05173 |
15000 +: | $ 0.04717 |
30000 +: | $ 0.04413 |
75000 +: | $ 0.04057 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Lead Free Status / RoHS Status: | -- |
Part Status: | Not For New Designs |
Moisture Sensitivity Level (MSL): | -- |
Transistor Type: | PNP - Pre-Biased |
Current - Collector (Ic) (Max): | 100mA |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Resistor - Base (R1): | 10 kOhms |
Resistor - Emitter Base (R2): | 4.7 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 24 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 10mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | 250MHz |
Power - Max: | 150mW |
Mounting Type: | Surface Mount |
Package / Case: | SC-75, SOT-416 |
Supplier Device Package: | EMT3 |
Base Part Number: | DTA114 |
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A DTA114WETL is a type of transistor called a Single, Pre-Biased Bipolar Junction Transistor. Bipolar Junction Transistors, or BJTs, are a type of three-terminal electronic device constructed from two PN junctions that form two discrete p-type and n-type semiconductor layers. A BJT is composed of an emitter, base, and collector. It works as an electrically gated switch, and its electrical properties depend on both the input and output currents.
The DTA114WETL consists of an NPN structure, with a single pre-biased transistor. This pre-biased transistor is designed to reduce the need for additional circuitry and external biasing, allowing for a simplified design. This substantially increases the DTA114WETL\'s speed, since all biasing can be handled internally. Additionally, the DTA114WETL is designed for SMD manufacturing, further maximizing its speed.
The DTA114WETL is intended for a wide range of applications, from low-end digital signal processing to high-speed telecommunications and data transmission. Its simple design also makes it useful for power management, especially in energy-critical applications. Due to its pre-biasing, the DTA114WETL also allows for improved power optimization under operating conditions, leading to improved cost efficiency. Furthermore, its suitability for SMD makes it the ideal choice for compact design and easy maintenance.
The DTA114WETL\'s working principle relies on the fact that carriers of opposite charge and spin direction can move through a semiconductor material efficiently. When a n-type material is placed in contact with p-type material, current can flow freely from the n-type to the p-type material, with the electrons entering the p-type material and the holes entering the n-type material.
The action of electrons and holes using the base of the transistor to combine is called transistor action. The electrons travel to the emitter, while the holes travel to the collector, and the transistor enters saturation if the current gain is greater than 1. When the base receives a small current, the collector will receive a greater current than the emitter, and the transistor ceases the flow of current once the current gain has reached its full value.
The DTA114WETL transistor utilizes this principle to provide a reliable, high-speed circuit element that is well-suited for a variety of applications. The pre-biasing of the DTA114WETL eliminates the need for additional external biasing circuitry, leading to improved power optimization and cost efficiency. Furthermore, its suitability for SMD production makes it ideal for compact design and maintaining high speeds.
The specific data is subject to PDF, and the above content is for reference
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