DTA114WUAT106 Allicdata Electronics

DTA114WUAT106 Discrete Semiconductor Products

Allicdata Part #:

DTA114WUAT106TR-ND

Manufacturer Part#:

DTA114WUAT106

Price: $ 0.00
Product Category:

Discrete Semiconductor Products

Manufacturer: ROHM Semiconductor
Short Description: TRANS PREBIAS PNP 200MW UMT3
More Detail: Pre-Biased Bipolar Transistor (BJT) PNP - Pre-Bias...
DataSheet: DTA114WUAT106 datasheetDTA114WUAT106 Datasheet/PDF
Quantity: 1000
Lead Free Status / RoHS Status: Lead free / RoHS Compliant
Moisture Sensitivity Level (MSL): 1 (Unlimited)
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Lead Free Status / RoHS Status: --
Part Status: Active
Moisture Sensitivity Level (MSL): --
Transistor Type: PNP - Pre-Biased
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 4.7 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 24 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 500nA
Frequency - Transition: 250MHz
Power - Max: 200mW
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Supplier Device Package: UMT3
Base Part Number: DTA114
Description

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DTA114WUAT106 application field and working principle

DTA114WUAT106 belongs to the family of digital transistors. It belongs to the single, pre-biased BJT transistor category. These transistors are used for a number of applications. They are used in automatic switching and control circuits. They can be used as switches to control the supply circuits. In addition, they are used as part of current amplifiers. Digital transistors are used in audio and video circuits as well. They are also used in automotive electronics.

The DTA114WUAT106 is a PNP Bipolar Transistor. As such, it has three terminals, including the emitter, collector and base. The emitter is a negative terminal and the collector is a positive terminal. The base is the control terminal. It is used to control the flow of current and voltage between the emitter and collector. This is done by controlling the voltage on the base.

The DTA114WUAT106 contains an ASIC designed with advanced modulation and demodulation techniques. It is designed to have an exceedingly low on-state resistance. This in turn helps in lowering power consumption. Furthermore, it contains a low collector-emitter saturation voltage, reducing power loss and improving the device’s reliability.

The device is fabricated on a single silica substrate. This process helps reduce the overall size and increases device stability. The device is designed with a low on-state current, providing better stability and longevity. Furthermore, the device’s on state current is isolated from the voltage applied to the base of the transistor, preventing unwanted current flow.

The device’s junction capacitance is minimal, providing low power consumption and switch performance. The device also contains a built-in antenna, which helps reduce the size of the circuit device. The device’s junction temperature is optimized, reducing power loss and improving performance.

This device is primarily used in electronic switching, control and signal producing. It is also used in power amplifiers and audio switches. The device has a high speed turn-on and turn-off capability, providing a fast response time. It has a wide range of service temperatures, making it suitable for a variety of applications. All of these features make the device an ideal component for numerous applications.

In summary, the DTA114WUAT106 is a high performance digital transistor that is used in a wide range of applications. Its features make it an ideal component for a range of signal producing and switching circuits. Its size and stability make it suitable for use in mobile and automotive applications.

The specific data is subject to PDF, and the above content is for reference

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