Allicdata Part #: | SI9945AEY-T1-ND |
Manufacturer Part#: |
SI9945AEY-T1 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Vishay Siliconix |
Short Description: | MOSFET 2N-CH 60V 3.7A 8SOIC |
More Detail: | Mosfet Array 2 N-Channel (Dual) 60V 3.7A 2.4W Surf... |
DataSheet: | SI9945AEY-T1 Datasheet/PDF |
Quantity: | 1000 |
Series: | TrenchFET® |
Packaging: | Tape & Reel (TR) |
Part Status: | Obsolete |
FET Type: | 2 N-Channel (Dual) |
FET Feature: | Logic Level Gate |
Drain to Source Voltage (Vdss): | 60V |
Current - Continuous Drain (Id) @ 25°C: | 3.7A |
Rds On (Max) @ Id, Vgs: | 80 mOhm @ 3.7A, 10V |
Vgs(th) (Max) @ Id: | 3V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 20nC @ 10V |
Input Capacitance (Ciss) (Max) @ Vds: | -- |
Power - Max: | 2.4W |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SO |
Base Part Number: | SI9945 |
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The SI9945AEY-T1 is a dual MOSFET array designed to meet the needs of low power applications. The device is composed of two independent N-channel MOSFETs with adjustable turn-on thresholds, allowing for a wide range of gate-to-source voltage (VGS) ranges and gate currents. The gate inputs are TTL compatible and can be used with logic-level signals for both source and drain operation.The SI9945AEY-T1 is an ideal solution for low power applications such as motor control, power supply control, and LED backlighting. The device is rated for use in applications with a maximum supply voltage of 12V and with a maximum current rating of 7.5A. The two independent MOSFETs can be used in combination or independently, making the device highly customizable. In addition, the device has a built-in temperature protection that activates when the temperature of the die reaches a predefined threshold.The SI9945AEY-T1 operates differently than its typical MOSFET counterparts, as it is a dual MOSFET array. While a single MOSFET has two terminals, the drain and the source, the MOSFET array has four terminals: the two drains and the two sources. The two independent MOSFETs are connected in parallel, meaning that the current traveling through them is shared equally. The operating principle of the SI9945AEY-T1 is based on the “avalanche-immunity effect”. When a voltage is applied to the gates of the MOSFETs, the presence of a small avalanche breakdown overcomes the gate threshold voltage, making the transistors conductive. This process is called Enhanced-VGS (eVGS), which allows for more efficient and reliable performance than traditional MOSFETs.Due to its low power consumption and logic-level gate inputs, the SI9945AEY-T1 is well-suited for automotive, industrial, and consumer electronics applications. The device provides a cost-effective solution for applications where current and efficiency are critical.Ultimately, the SI9945AEY-T1 is an ideal solution for the user that needs a compact, low power, and cost-effective MOSFET array. With its logic-level gate inputs, avalanche-immunity effect, and adjustable thresholds, it provides an efficient and reliable device that can be tailored to meet specific design requirements.
The specific data is subject to PDF, and the above content is for reference
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