DMP45H4D9HJ3

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The DMP45H4D9HJ3 is a single N-channel enhancement-mode silicon-gate power field effect transistor (FET). It is designed to read, select and control high speed circuits with the aid of low power consumption, low on-resistance and small packaging.

The major application field of DMP45H4D9HJ3 is high frequency switching. The DMP45H4D9HJ3 transistor is designed for use in many different applications, such as Switching Mode Power Supplies (SMPS) and server-on-module applications. In addition, the transistor is also suitable for audio and radio frequency (RF) applications.

The working principle of a power field effect transistor is grounded on the principle of Quantum Magnetism. Electrons flow between two electrodes that absorb and emit electrons from a power field. When a voltage is applied to the gate terminal, it establishes an electric field perpendicular to the surface of the semiconductor, which then creates a varying “quantum magnetism” inside the semiconductor material. This quantum magnetism causes the local electron concentration to shift or move depending on the degree of the applied electric field, thus controlling the amount of current that is able to flow through the single N-channel.

Power Field Effect Transistors such as the DMP45H4D9HJ3 are able to operate with very low gate current and higher frequency. This makes them well suited for applications such as switching power supplies, converters and amplifiers. In addition,they also offer higher input impedance and lower power consumption. This allows them to be used in applications that require low noise operation and high efficiency.

The DMP45H4D9HJ3 is designed with a low on-resistance (RDSon) and a high breakdown voltage to ensure better performance and reliability. It also offers a low drain-source capacitance (Cdss) to minimize switching time, thus allowing for faster switching speeds. The transistor has a maximum Drain-Source Voltage rating of 45 Volts, a maximum Single Pulse Drain Current rating of 175 mA, a maximum Continuous Drain Current rating of 50 mA, and a Maximum Power Dissipation of 250 mW.

To ensure safety, the DMP45H4D9HJ3 is also ESD protected. This prevents static electricity from damaging the transistor. Furthermore, the package is also lead (Pb)-free and RoHS (Restrictions on Hazardous Substances) compliant. The small TSSOP-8L package offers better thermal dissipation, which enables the transistor to operate at higher temperatures. In addition, this package is lead-free and Halogen-free, and meets CEC requirements.

In conclusion, the DMP45H4D9HJ3 is a single N-channel enhancement-mode silicon-gate power field effect transistor that is designed for use in high frequency switching. It is ideal for applications such as Switching Mode Power Supplies (SMPS) and server-on-module applications, as well as for audio and radio frequency (RF) applications. Furthermore, it has a low on-resistance and a high breakdown voltage, making it ideal for low noise operation, high efficiency and fast switching speeds. This transistor is also ESD protected and packaged in a lead-free and halogen-free package that meets CEC requirements.

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