DMP4025LSSQ-13 Allicdata Electronics
Allicdata Part #:

DMP4025LSSQ-13-ND

Manufacturer Part#:

DMP4025LSSQ-13

Price: $ 0.39
Product Category:

Discrete Semiconductor Products

Manufacturer: Diodes Incorporated
Short Description: MOSFET PCH 40V 6A 8SO
More Detail: P-Channel 40V 6A (Ta) 1.52W (Ta) Surface Mount 8-S...
DataSheet: DMP4025LSSQ-13 datasheetDMP4025LSSQ-13 Datasheet/PDF
Quantity: 1000
2500 +: $ 0.34872
Stock 1000Can Ship Immediately
$ 0.39
Specifications
Series: Automotive, AEC-Q101
Packaging: Tape & Reel (TR) 
Part Status: Active
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Rds On (Max) @ Id, Vgs: 25 mOhm @ 3A, 10V
Vgs(th) (Max) @ Id: 1.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 33.7nC @ 10V
Vgs (Max): ±20V
Input Capacitance (Ciss) (Max) @ Vds: 1640pF @ 20V
FET Feature: --
Power Dissipation (Max): 1.52W (Ta)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Supplier Device Package: 8-SO
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Description

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The DMP4025LSSQ-13 is a kind of high-powered MOSFET with a wide range of applications and a relatively simple working principle. It is a high-voltage vertical MOSFET, withstanding voltage up to 125 volts, designed specifically for automotive applications such as lighting, infotainment and body systems. With its high current capability, fast switching rate, low on-resistance and fast gate rise time, the DMP4025LSSQ-13 excels in both power and noise-sensitive applications.

The working principle of MOSFETs is based on the principles of field-effect transistors (FETs). In FETs, electric current is controlled by a region of silicon material called the “channel” that is between the source and drain electrodes on the device. This electric current is created when a voltage is applied across the gate and source. The higher the voltage, the greater the amount of electric current. The same basic principles apply to MOSFETs, but with two main differences. Firstly, MOSFETs do not rely on a physical gate, which can require materials and current processing, but instead use an electric field to control the flow of electrons. Secondly, the electric field is not generated by the voltage applied across the gate and source, but by a voltage applied between the gate and the substrate. Therefore, the gate voltage controls the electric field, and consequently the amount of electric current.

The DMP4025LSSQ-13 is particularly suitable for automotive applications because of its unique design and features. Firstly, the device has an internally integrated design featuring an Ultra-Thin Gate Oxide Technology, which provides less resistance and higher current handling capability than other MOSFETs. Secondly, the Trench Planar Technology used in the device eliminates the need for snap-back protection, making it suitable for use in power-sensitive applications. This technology also features a low gate charge, which allows for a fast gate rise-time and low noise. Furthermore, the device has an optimized on-resistor and gate charge, allowing for high efficiency and fast switching rates.

The DMP4025LSSQ-13 has a wide range of applications in automotive electronics. It is used in systems such as lighting, infotainment and body control, where its fast switching rate, high current handling capability and low noise level make it an ideal choice. Furthermore, the device is suitable for use in power-sensitive applications due to its low on-resistance and fast gate rise time. Finally, the device is optimized for instant switching, allowing for a shorter switching time, better power savings and overall increased performance.

In conclusion, the DMP4025LSSQ-13 is a powerful high-voltage vertical MOSFET designed specifically for automotive applications. With its optimized on-resistor, integrated design, Ultra-Thin Gate Oxide Technology, Trench Planar Technology and other features, the device excels in both power and noise-sensitive applications. Furthermore, the optimized design of the device allows for a fast switching rate, high current handling capability, low on-resistance and low noise level, making it suitable for a wide range of automotive applications.

The specific data is subject to PDF, and the above content is for reference

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