Allicdata Part #: | DMP45H4D9HK3-13-ND |
Manufacturer Part#: |
DMP45H4D9HK3-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 450V 4.7A TO252 |
More Detail: | P-Channel 450V 4.7A (Tc) 104W (Tc) Surface Mount T... |
DataSheet: | DMP45H4D9HK3-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 4.7A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4.9 Ohm @ 1.05A, 10V |
Vgs(th) (Max) @ Id: | 5V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 13.7nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 564pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 104W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | TO-252, (D-Pak) |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
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(30)The DMP45H4D9HK3-13 is a vertical double diffused metal oxide semiconductor (DMOS) metal oxide semiconductor field effect transistor (MOSFET) used in a wide variety of applications. It can be classified as a single MOSFET because it has a single P-type substrate and gate. It is commonly used in switching applications such as audio amplifiers and adapters, battery charging systems, automotive applications, and power supplies.
The DMP45H4D9HK3-13 MOSFET is a vertical structure power device, where the source and the drain regions are comprised of two separate metal oxide layers, each connected to its own gate contact. The device is designed for traditional power MOSFET applications such as DC-DC converters, PFC, synchronous rectifiers, or any other application that requires high-efficiency, fast switching, and low on-resistance. It is able to provide very low on-resistance and gate charge for higher efficiency at a lower gate operation voltage.
The DMP45H4D9HK3-13 dissipates a large amount of power without any higher input power or external gate due to its excellent thermal characteristics. The lifetime of the device is improved by the high degree of intrinsic control provided by the vertical structure configuration. As a result, the device offers excellent reliability and superior performance.
The working principle of the DMP45H4D9HK3-13 is as follows. When a positive gate voltage is applied to the MOSFET, the gate voltage creates an electric field which attracts electrons from the n-channel and forms an inversion layer, thus creating a conductive channel between the drain and the source. When the gate voltage reaches the threshold voltage, electrons start to flow through the channel, which results in a current flow between the drain and the source. The device turns off when the gate voltage is reduced to zero or below the threshold voltage, thus depleting the inversion layer of electrons and cutting off the current flow.
The DMP45H4D9HK3-13 is an excellent choice for applications requiring low on-resistance, high efficiency, and fast switching. It is well-suited for synchronous rectification, DC-DC converters, PFC, and audio amplifiers. It is robust, reliable, and possesses a high temperature tolerance, making it a great option for automotive applications and other high-powered applications.
The specific data is subject to PDF, and the above content is for reference
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