DMP4010SK3Q-13 Discrete Semiconductor Products

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DMP4010SK3Q-13 Application Field and Working Principle

A DMP4010SK3Q-13 is one of the best performing high-voltage N-Channel MOSFET (Metal Oxide Field Effect Transistor) designed for various applications. This semiconductor device is designed for load switch, high side switch and voltage load circuit configurations. The transistor is specifically designed as a monolithic with dual N-channel MOSFET and integrated gate charge pump in which the two N-channel MOSFETs are actively connected on a single silicon chip, and fabricated in a P-Channel enhancement mode.

Application Fields

The DMP4010SK3Q-13 N-channel MOSFET has a wide range of possible application fields due to its various features, such as its high voltage, low on-state resistance, and fast switching time. The device can be applied as load switches, high-side switches, and current level-shifting circuits. It can be used as a load switch in distributed low voltage control and load control systems, such as LED dimming, LED backlighting and lighting systems, as well as in power electronics and power management systems. Furthermore, it can be widely used as a high-current load switch in automotive, computer and portable applications.

Working Principle

The integrated circuit of the DMP4010SK3Q-13 contains two N-Channel Enhancement MOSFETs, a logic level gate charge pump and an integrated protection circuit. It utilizes voltages as low as 4.5V and can switch loads up to 30V. The integrated gate charge pump provides high voltage logic level gate drive and also enables compatibility with low voltage logic level interface. It exhibits an extremely low on-state resistance and fast switching time, enabling it to exercise higher levels of efficiency.

The N-Channel MOSFETs have their source tied to the source of the load and their drain tied together. When the gate-source voltage of either MOSFET is high, the MOSFET will turn on. This turns on the device, allowing the current to flow from the source to the drain. The integrated gate charge pump ensures that the gate-source voltage is high by boosting the logic level gate drive voltage. If the logic level gate drive voltage is high, the device will remain in the on state. On the other hand, if the logic level gate drive voltage is low, both MOSFETs are off and the device is in the off-state.

In terms of its basic construction, the DMP4010SK3Q-13 has an N-channel enhancement MOSFET, gate charge pumps, and an integrated protection circuit. The N-channel Enhancement MOSFET, which is the main component, is mainly used to regulate the current flow in power management systems. The gate charge pumps boost the logic level gate drive, making it possible to interact with low-voltage logic levels. The integrated protection circuit helps to protect the device from overvoltage, short circuit, and reverse voltages.

Conclusion

Overall, the DMP4010SK3Q-13 is an advanced N-Channel MOSFET designed for various load switch, high-side switch and voltage load circuit configurations. Its features give it a wide range of possible application fields, such as in load switching, high-current load switching, and current level-shifting in power management systems. The integrated gate charge pump and integrated protection circuit add an extra layer of safety and versatility.

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