Allicdata Part #: | DMP4025SFGQ-13DITR-ND |
Manufacturer Part#: |
DMP4025SFGQ-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFET P-CH 40V 7.2A POWERDI3333 |
More Detail: | P-Channel 40V 7.2A (Ta) 810mW (Ta) Surface Mount P... |
DataSheet: | DMP4025SFGQ-13 Datasheet/PDF |
Quantity: | 3000 |
Series: | Automotive, AEC-Q101 |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 40V |
Current - Continuous Drain (Id) @ 25°C: | 7.2A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 25 mOhm @ 3A, 10V |
Vgs(th) (Max) @ Id: | 1.8V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 33.7nC @ 10V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 1643pF @ 20V |
FET Feature: | -- |
Power Dissipation (Max): | 810mW (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PowerDI3333-8 |
Package / Case: | 8-PowerVDFN |
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DMP4025SFGQ-13 is a P-Channel 100V/25A single MOSFET from Vishay Siliconix. It is housed in a compact PowerPAK SO-8 SMD package, making it appropriate for applications with space limitations. This MOSFET has relatively low gate charge, RDS(on), and low negative gate-source voltage allowing it to be utilized in high-frequency switching performance. Even though it is considered small, it is still a versatile and powerful transistor.
The application field of the DMP4025SFGQ-13 includes automotive, computers, communication systems, and any application requiring high-frequency switching. Its compact size & low power requirement makes it a natural fit for automotive applications as well as mobile electronics. In these applications, the enhanced RDS(on) and negative gate source voltage can provide improved efficiency & reduced power consumption.
The DMP4025SFGQ-13 operates with a gate voltage from -2.5V to -12V and drain current from 0A to 25A. Its maximum drain source voltage is 100V and on-state resistance is just 11mohm. The breakdown voltage of the transistor is 105V and its maximum pulsed drain current is 37A. The threshold voltage is estimated to be -4.5V.
The working principle of DMP4025SFGQ-13 is that when the voltage is applied to the gate, the electrons get attracted and creates an inversion layer which further triggers a decrease in resistance of the channel, making it to act like an open switch, allowing the current flow from the drain to the source. When the gate voltage is removed, the electrons are repelled and the inversion layer breaks down, resulting in high resistance of the channel, thus blocking the flow of the current from the drain to the source. The DMP4025SFGQ-13 has a very low gate charge, resulting in higher switching speeds and improved efficiency of the system.
In a nutshell, the DMP4025SFGQ-13 is an excellent P-channel MOSFET that offers very good switching performance, low power consumption, and exceptional reliability. Its small size and low on-state resistance makes it ideal for use in space-constrained applications such as automotive, mobile electronics, and communications systems. The low gate charge makes it a perfect choice for high-frequency switching applications that require higher efficiency and lower power consumption.
The specific data is subject to PDF, and the above content is for reference
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