Allicdata Part #: | DMP45H150DHE-13DITR-ND |
Manufacturer Part#: |
DMP45H150DHE-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | MOSFETP-CHAN 450VSOT223 |
More Detail: | P-Channel 450V 250mA (Tc) 13.9W (Tc) Surface Mount... |
DataSheet: | DMP45H150DHE-13 Datasheet/PDF |
Quantity: | 1000 |
Specifications
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
FET Type: | P-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 450V |
Current - Continuous Drain (Id) @ 25°C: | 250mA (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 150 Ohm @ 50mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 1.8nC @ 10V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 59.2pF @ 25V |
FET Feature: | -- |
Power Dissipation (Max): | 13.9W (Tc) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | SOT-223 |
Package / Case: | TO-261-4, TO-261AA |
Description
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The DMP45H150DHE-13 is one of the most reliable N-Channel MOSFETs available in the market today. With extremely low on-resistance and current handling capabilities of up to 45A, it is the go-to power transistor for many applications. The DMP45H150DHE-13 offers a low charge-to-turn-on gate which ensures the gate signal effectively controls the power flow at all times. Moreover, the MOSFET incorporates the "D-PAK" Power MOSFET technology to make the MOSFET compatible with board designs where space is at a premium.
Application Field
The DMP45H150DHE-13 is ideal for a variety of applications, particularly those with heavy load requirements that would otherwise require bulky power transistors. For example, it is used as a power amplifier in high-power audio amplifiers for delivering tight bass output and clean treble. It is also commonly used in high-speed switching application such as high-power DC/DC converters and switched-mode power supplies. In industrial applications, the DMP45H150DHE-13 can be used for motor control and other high-voltage applications. Additionally, due to its low heat dissipation capabilities, it can be used in space-constrained applications, such as notebook PCs and other battery-powered devices.Working Principle
The DMP45H150DHE-13 leverages the phenomenon of avalanche breakdown to achieve its high current handling capability. A voltage bias is applied to the drain-source terminals to turn the MOSFET on. During this process, electrons and holes in the MOSFET form a conducting channel across the depletion region between the P-type and N-type regions and allow current to flow. The larger the applied field, the larger the number of electrons and holes that will form to create the conducting channel. This increases the current handling capability. Furthermore, the DMP45H150DHE-13 has a VGS (gate-source voltage) threshold of 4V, meaning that once the gate-source voltage exceeds 4V, the MOSFET will begin to conduct, allowing a larger current to flow. This is referred to as the “avalanche region”, and is why the MOSFET is so highly regarded for its high current handling characteristics.Conclusion
The DMP45H150DHE-13 is a high performance N-Channel MOSFET that is suitable for a wide range of applications. It benefits from low resistance and a low VGS threshold of 4V, which enables the MOSFET to handle large currents even at low voltages. It is also capable of handling high heat dissipation, making it suitable for space-constrained applications. The DMP45H150DHE-13 is the perfect power transistor for applications where reliability, performance, and efficiency are top priorities.The specific data is subject to PDF, and the above content is for reference
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