Allicdata Part #: | 25LC040AT-I/MNY-ND |
Manufacturer Part#: |
25LC040AT-I/MNY |
Price: | $ 0.29 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 4K SPI 10MHZ 8TDFN |
More Detail: | EEPROM Memory IC 4Kb (512 x 8) SPI 10MHz 8-TDFN (... |
DataSheet: | 25LC040AT-I/MNY Datasheet/PDF |
Quantity: | 1000 |
3300 +: | $ 0.26605 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 4Kb (512 x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 85°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-WFDFN Exposed Pad |
Supplier Device Package: | 8-TDFN (2x3) |
Base Part Number: | 25LC040A |
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25LC040AT-I/MNY is an 4kB Electrically Erasable Programmable Read Only Memory (EEPROM) device. It has been used in a variety of applications, where non-volatile memory is needed to store data or configuration information. 25LC040AT-I/MNY is a cost-effective solution for applications requiring a small amount of non-volatile memory.
Application Field of 25LC040AT-I/MNY Memory
25LC040AT-I/MNY EEPROM device is well suited for applications such as embedded real-time systems, temperature logging systems, hand-held and sensor nodes, etc. These devices are also used in applications such as wireless system designs and embedded control systems, where it is necessary to maintain memory data even when power is removed.
In addition, 25LC040AT-I/MNY memory is also used in automotive and industrial applications, where non-volatile data needs to be stored. This device is ideal for use in applications that require reliable data retention, such as automotive interior system controllers, vehicle management systems, and industrial controllers.
25LC040AT-I/MNY Working Principle
25LC040AT-I/MNY is an Earth programmable non-volatile memory device. Working principle of 25LC040AT-I/MNY is based on arranged data storage cells. Data is stored in each non-volatile cell with corresponding address. The cells are configured in accordance with the connected memory chips configured by the corresponding transistors. In each memory cell, one of two levels of data (1 or 0) can be stored. The storage cell is programmed by applying appropriate voltage level at the source connected to the read/write line.
To read data, voltage is applied to the memory cell via corresponding bit line and the read/write line and the level of the drain connected to the bit line is read. The representative of the voltage in the level of the bit line will indicate whether that bit cell contains a ’1’ or a ’0’. Due to semiconductor properties, the data in the cell will remain even if the power is removed.
25LC040AT-I/MNY memory also has built-in error detection mechanisms, like parity and checksum functionality, which help to improve the accuracy of transmission and storage. The device also has built-in algorithms that provide excellent protection against sudden power failure. 25LC040AT-I/MNY memory can operate at various bus speeds and temperatures.
Conclusion
25LC040AT-I/MNY is a cost-effective solution for applications requiring a small amount of non-volatile memory. It can be used in embedded real-time systems, temperature logging systems, as well as automotive and industrial applications. The device has built-in error detection mechanisms and algorithms to protect against sudden power failure, and can operate at various bus speeds and temperatures.
The specific data is subject to PDF, and the above content is for reference
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