25LC040XT/ST Allicdata Electronics
Allicdata Part #:

25LC040XT/ST-ND

Manufacturer Part#:

25LC040XT/ST

Price: $ 0.00
Product Category:

Integrated Circuits (ICs)

Manufacturer: Microchip Technology
Short Description: IC EEPROM 4K SPI 2MHZ 8TSSOP
More Detail: EEPROM Memory IC 4Kb (512 x 8) SPI 2MHz 8-TSSOP
DataSheet: 25LC040XT/ST datasheet25LC040XT/ST Datasheet/PDF
Quantity: 1000
Stock 1000Can Ship Immediately
Specifications
Series: --
Packaging: Tape & Reel (TR) 
Part Status: Active
Memory Type: Non-Volatile
Memory Format: EEPROM
Technology: EEPROM
Memory Size: 4Kb (512 x 8)
Clock Frequency: 2MHz
Write Cycle Time - Word, Page: 5ms
Memory Interface: SPI
Voltage - Supply: 2.5 V ~ 5.5 V
Operating Temperature: 0°C ~ 70°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Supplier Device Package: 8-TSSOP
Base Part Number: 25LC040X
Description

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:

The 25LC040XT/ST is a 4096-bit serial electrically erasable programmable read-only memory (EEPROM). It works on a 3-pin power supply, and the control signals are on four pins. It utilizes a serial access protocol for reading and writing. It has a two-wire interface which operates as either an I²C-compatible Serial Data (SDA) or a Serial Peripheral Interface (SPI-compatible) serial data input/output port. This makes the memory simple to use and its flexibility also makes it a particularly desirable part in embedded systems that require data storage.

The 25LC040XT/ST EEPROM has a wide variety of applications. It can be used to store data that is to be read and written to regularly, such as alarm settings, passwords, address books, or configuration settings. It can also store larger amounts of data, such as firmware or code. It can also be used in devices that require non-volatile storage, such as digital cameras and PDAs. The 25LC040XT/ST can also be used to provide a sort of "backup RAM" in the case of a power outage, where the contents of SRAM can be copied to the EEPROM.

The 25LC040XT/ST works on a principle known as Fowler-Nordheim tunneling. This is a type of field-assisted tunneling which takes place in insulators, such as EEPROMs, integrated circuits, and non-volatile memory. It occurs when a negative charge is injected into the device and is used to release a single electron from the valence band of the semiconductor material. This in turn breaks the bond between it and a nearby atom, causing the electron to tunnel through the insulating material and be stored in an empty electron hole outside the device.

Once the charge has been injected, it will remain until it is removed by a high positive voltage which pushes the electron back into its original hole. This is the basic method by which EEPROMs are written to, and it allows for a non-volatile form of data storage which can be retained even when power is lost.

In summary, the 25LC040XT/ST is a 4096-bit serial EEPROM which works on a 3-pin power supply. It has a two-wire interface which operates as either an I²C-compatible SDA or SPI-compatible serial data input/output port. It has many uses, ranging from storing data regularly to providing non-volatile storage in digital cameras and PDAs. It works on the principle of Fowler-Nordheim tunneling and can be used to provide a form of "backup RAM" in the case of a power outage.

The specific data is subject to PDF, and the above content is for reference

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