Allicdata Part #: | 25LC080C-E/SN-ND |
Manufacturer Part#: |
25LC080C-E/SN |
Price: | $ 0.39 |
Product Category: | Integrated Circuits (ICs) |
Manufacturer: | Microchip Technology |
Short Description: | IC EEPROM 8K SPI 10MHZ 8SOIC |
More Detail: | EEPROM Memory IC 8Kb (1K x 8) SPI 10MHz 8-SOIC |
DataSheet: | 25LC080C-E/SN Datasheet/PDF |
Quantity: | 697 |
1 +: | $ 0.35280 |
25 +: | $ 0.33743 |
100 +: | $ 0.32445 |
Series: | -- |
Packaging: | Tube |
Part Status: | Active |
Memory Type: | Non-Volatile |
Memory Format: | EEPROM |
Technology: | EEPROM |
Memory Size: | 8Kb (1K x 8) |
Clock Frequency: | 10MHz |
Write Cycle Time - Word, Page: | 5ms |
Memory Interface: | SPI |
Voltage - Supply: | 2.5 V ~ 5.5 V |
Operating Temperature: | -40°C ~ 125°C (TA) |
Mounting Type: | Surface Mount |
Package / Case: | 8-SOIC (0.154", 3.90mm Width) |
Supplier Device Package: | 8-SOIC |
Base Part Number: | 25LC080C |
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25LC080C-E/SN is a type of non-volatile, electrically erasable programmable read-only memory (EEPROM). It is a semiconductor memory device which uses electric charges to store a small amount of data. It allows data to be written and erased in a very small number of times, making it an ideal choice for applications needing data storage that needs to be changed multiple times.
Application Field
25LC080C-E/SN has wide application fields.It can be used for a variety of applications such as automotive, computers, gaming systems, GPS units, mobile phones, home controllers and embedded systems. It can be used to store control logic and memory calibration data. Like a Microchip 24LC series, 25LC080C-E/SN can store up to 8K bytes of data, that can be transmitted over a bus and read or written to by microcontrollers quickly.The 25LC080C-E/SN nonvolatile memory is a strong choice for applications that require frequent data storage, while needing security and reliability. These devices are factory-programmed configurations that ensure reliable data storage with comprehensive data retention as data stored in the device will remain intact even when power is lost.
Working Principle
The working principle of 25LC080C-E/SN utilizes a floating-gate technology to store the data. A floating gate is a layer of an oxide or nitride material that is located between the substrate and the control gate in a field-effect transistor (FET). In this structure, the control gate is insulated from the substrate and the source/drain regions, meaning that it can be charged or discharged without losing all of the charge. In 25LC080C-E/SN, information can be written and erased individually in a very efficient way. The memory cell is nonvolatile, meaning that it retains data even when power is removed. When a data bit needs to be written, a voltage is applied to the control gate and electrons are injected into the channel to the drain. This increases the threshold voltage of the transistor and this bit will remain stored in the transistor until it is written to again.
The 25LC080C-E/SN nonvolatile memory is an excellent choice for a wide range of applications that require frequent writing and erasing of data. It provides quick and reliable data storage, and its small size makes it ideal for applications where space and cost are a concern. Its unique floating-gate technology makes it perfect for applications that require reliable data storage with comprehensive data retention, even with power loss.
The specific data is subject to PDF, and the above content is for reference
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