2DB1132Q-13 Discrete Semiconductor Products

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Introduction:

The 2DB1132Q-13 application field and working principle can be placed in the transistors – bipolar (BJT) – single category. Also referred to as a Bipolar Junction Transistor (or BJT), this device contains three main sections; the emitter, the base and the collector. These three parts are responsible for the bipolar current flow, which lets current flows in both directions. This 2DB1132Q-13 is a NPN (Negative Positive Negative) type of component, meaning that the emitter is a negative polarity and the collector is a positive polarity.

2DB1132Q-13 Application Field

As a NPN transistor, the 2DB1132Q-13 is mainly used for amplifying electronic signals. This transistor is particularly suitable for common-emitter applications like operational amplifiers and low-frequency amplifiers. It can also be used for general switching applications, although rarely. As the 2DB1132Q-13 is a low voltage type transistor, it has a wide range of uses in low voltage applications such as portable radios, toys, computers, etc.

In addition to amplification and switching, the 2DB1132Q-13 can also be used for audio output stages. It is used in audio amplifiers, speech processing circuits and tone controls for radios. Furthermore, the 2DB1132Q-13 can also be used in automotive applications since it is rated to withstand the harsh environment found in cars. Specifically, this device can be used in car alarms, ignition systems and audio equipment.

2DB1132Q-13 Working Principle

The 2DB1132Q-13 uses current to operate. There’s need to understand the way the current flow inside the device so that it can be used in a reliable and efficient way. The current flow inside the BJT can be described as a three electron loop. It starts from the emitter, through the base and back to the emitter. The collector current is dependent on the amount of current flowing through the base. This current is known as the base current. The amount of the collector current depends on the ratio between the collector and the base currents. This ratio is known as the current gain (hFE). The higher the hFE, the higher the current gain.

Now, to get the current gain in the 2DB1132Q-13, the following equation must be used:hFE = Ic/Ib,Where Ic is the collector current and Ib is the base current.

The main job of the 2DB1132Q-13 is to amplify the current, so the higher the current gain (hFE) the better the device will perform. For this particular transistor, hFE can typically reach up to 600. The maximum current that can be passed through the collector is 1.5A while the maximum base current can be as high as 130mA. The maximum collector emitter voltage is also quite high at 50V.

When used in switching applications, the 2DB1132Q-13 must be biased (connected) in the active region. In order for the device to work properly, the base voltage (Vbe) needs to be greater than 0.6V and the voltage drop across the collector needs to be lower than the supply voltage. When these conditions are met, the device will switch on and off very quickly, which is essential for proper switching applications.

In conclusion, the 2DB1132Q-13 is mainly used for amplifying electronic signals and for general switching. It offers a typical current gain of 600 and can withstand a maximum collector current of 1.5A and a maximum emitter collector voltage of 50V. When used in switching applications, the 2DB1132Q-13 must be biased correctly in order to work properly.

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