2DB1184Q-13 Discrete Semiconductor Products |
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Allicdata Part #: | 2DB1184Q-13DITR-ND |
Manufacturer Part#: |
2DB1184Q-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 50V 3A DPAK |
More Detail: | Bipolar (BJT) Transistor PNP 50V 3A 110MHz 15W Sur... |
DataSheet: | 2DB1184Q-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 3A |
Voltage - Collector Emitter Breakdown (Max): | 50V |
Vce Saturation (Max) @ Ib, Ic: | 1V @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 3V |
Power - Max: | 15W |
Frequency - Transition: | 110MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252, (D-Pak) |
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2DB1184Q-13 Application Field and Working Principle
The 2DB1184Q-13 is a bipolar transistor manufactured by 2S. It is a type of single semiconductor transistor, which is a current regulating device, using the movement of charge carriers to control the flow of electricity.
Bipolar transistors, also known as BJTs, are used to amplify current and voltage, allowing efficient control of a large current by a small current and voltage. They are commonly found in amplifiers, oscillators and switches, as well as voltage regulators. The 2DB1184Q-13 is a NPN transistor.
Working Principle
NPN transistors are configured to be operated as switches by placing two terminals of a circuit in a current controlling arrangement. The two terminals of the transistor’s base-collector junction (B-C) are connected to the source of current, while the base-emitter junction (B-E) is connected to the input. Current is passed through the base-emitter junction, and this creates an external electrons (emitters) within the transistor.
These electrons then combine with the holes in the collector region and current flow is established between the B-C junction and the E-C junction. This arrangement of the BJT transistor allows it to be used as an on/off switch, or as a variable current and voltage regulator. When the voltage between the B-C junction is increased, the current flow between the B-C junction and the E-C junction decreases.
The 2DB1184Q-13 is a NPN bipolar transistor, which is designed to be used in applications that require a fast switch speed. It has a max collector current of 800mA, a current gain (hfe) of 160-240, and a breakdown voltage of 60V.
Application Fields
The 2DB1184Q-13 is mainly used as an on/off switch or current regulator. It can be used in various applications such as automotive systems, electrical equipment, audio/video products and electronic control systems. It is also used in power switching, motor control, optical switching, voltage regulation, and other high-power devices.
The 2DB1184Q-13 is a reliable solution for applications that require a fast operation speed. It can be used in a variety of devices, such as audio system power amplifiers, power switching, automotive modules, high-power switches, voltage regulators and other high-power applications.
Conclusion
The 2DB1184Q-13 NPN bipolar transistor manufactured by 2S is a highly reliable, fast switching transistor. It is mainly used for applications that require high speed and can be used for a variety of applications, such as audio systems, power switching, motor control, optical switching, and voltage regulation.
The specific data is subject to PDF, and the above content is for reference
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