2DB1424R-13 Discrete Semiconductor Products

Series:	--
Packaging:	Tape & Reel (TR)
Part Status:	Active
Transistor Type:	PNP
Current - Collector (Ic) (Max):	3A
Voltage - Collector Emitter Breakdown (Max):	20V
Vce Saturation (Max) @ Ib, Ic:	500mV @ 100mA, 2A
Current - Collector Cutoff (Max):	100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:	180 @ 100mA, 2V
Power - Max:	1W
Frequency - Transition:	220MHz
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Package / Case:	TO-243AA
Supplier Device Package:	SOT-89-3
Base Part Number:	2DB1424

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2DB1424R-13 application field and working principle

Introduction

The 2DB1424R-13 is a single bipolar junction transistor (BJT) designed specifically for use in computers and other connected electronic devices. This transitor is designed to be versatile and, thus, is suitable for both digital and analogue applications. The 2DB1424R-13 features an emitter current that can be adjusted with a single external resistor, along with a high gain and a low minimum current requirement. Furthermore, it features a low power consumption, making it suitable for a wide range of electronic applications.

Application and working principle

The 2DB1424R-13 is designed for use in a wide range of electronic applications. In general, transistors are used in electronics to amplify, switch and rectify electrical signals. The 2DB1424R-13 is suitable for both signal rectification and signal amplification tasks.In terms of signal rectification, the 2DB1424R-13 is particularly suitable for digital applications, such as those found in computers and connected electronics. The transistor acts as a switch, allowing a voltage signal to be sent from one point to another. It does this by blocking out any voltages that are higher than a certain limit. This allows for the signals to be transmitted accurately and effectively, allowing for reliable data transfer and communication.In terms of signal amplification, the 2DB1424R-13 can be used to amplify small signals. This is achieved through the transistor\'s base-emitter and collector-emitter junctions. The collector-emitter junction is designed to allow a large amount of current to flow through the transistor when a voltage is applied. This, in turn, allows the transistor to amplify the signal and increase its current output.The 2DB1424R-13 also features a built-in emitter resistance adjustment feature. This allows the emitter current to be adjusted with a single external resistor, allowing for a more precise and reliable output. Furthermore, this feature helps to reduce power consumption, allowing for more efficient operation.The 2DB1424R-13 also features a high gain, meaning that it can be used to amplify very small signals, allowing them to be amplified to larger levels. This is beneficial in many different applications, such as radio communications, television, audio amplification and data transmission.Finally, the 2DB1424R-13 also features a low minimum current requirement. This helps to reduce power consumption, allowing the transistor to be used in applications where power is a limited resource.

Conclusion

The 2DB1424R-13 is a single bipolar junction transistor (BJT) designed for use in digital and analogue applications. It is versatile and suitable for a wide range of applications, from signal rectification and switching to signal amplification. It features an adjustable emitter current with a single external resistor, along with a high gain and a low minimum current requirement. Furthermore, it has a low power consumption, making it suitable for portable electronics and other applications where power is at a premium.

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