2DB1697-13 Discrete Semiconductor Products

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2DB1697-13 is a transistors type of bipolar (BJT) and single. This semiconductor device comprises three layers of semiconductor material, an NFW layer, a NFW or PFW middle layer, and a PFW layer that can be manipulated in order to switch electrical current on and off.

Application field

2DB1697-13 is mainly used for low-power circuits, such as amplifiers, signal switches, signal attenuation, and frequency conversion. It is also suited for applications requiring higher breakdown voltage such as TV switch/driver applications and high power switches.

Working principle

2DB1697-13 works based on the fact that when the base–emitter voltage (VBE) is greater than a certain threshold, current starts to flow between the emitter and the collector of the transistor. This current is controlled by the current flowing into the base. By changing the current flowing into the base terminal, the amount of current flowing between the emitter and the collector terminals can be varied, thus controlling the over all current in circuit.

2DB1697-13 also provides characteristics such as a low saturation voltage, high efficiency, low power consumption, and wide band gap. Additionally, it is designed to be used in a wide range of environments, from the most severe industrial applications to desktop and handheld devices.

In summary, 2DB1697-13 is a transistor suitable for many applications requires because of its wide bandgap and low voltage characteristics. It is a type of bipolar (BJT) and single.

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