2DB1182Q-13 Discrete Semiconductor Products |
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Allicdata Part #: | 2DB1182Q-13DITR-ND |
Manufacturer Part#: |
2DB1182Q-13 |
Price: | $ 0.00 |
Product Category: | Discrete Semiconductor Products |
Manufacturer: | Diodes Incorporated |
Short Description: | TRANS PNP 32V 2A TO252 |
More Detail: | Bipolar (BJT) Transistor PNP 32V 2A 110MHz 10W Sur... |
DataSheet: | 2DB1182Q-13 Datasheet/PDF |
Quantity: | 1000 |
Series: | -- |
Packaging: | Tape & Reel (TR) |
Part Status: | Active |
Transistor Type: | PNP |
Current - Collector (Ic) (Max): | 2A |
Voltage - Collector Emitter Breakdown (Max): | 32V |
Vce Saturation (Max) @ Ib, Ic: | 800mV @ 200mA, 2A |
Current - Collector Cutoff (Max): | 1µA (ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 120 @ 500mA, 3V |
Power - Max: | 10W |
Frequency - Transition: | 110MHz |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Package / Case: | TO-252-3, DPak (2 Leads + Tab), SC-63 |
Supplier Device Package: | TO-252 |
Base Part Number: | 2DB1182 |
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,2DB1182Q-13 Application Field and Working Principle
2DB1182Q-13 is a type of single bipolar junction transistor (BJT). Generally, the single bipolar junction transistor refers to one thyristor composed of two levels. Through two p-n junctions of a certain structure, the output current of the transistor can be controlled by controlling the input voltage of the transistor, so as to realize the amplification, switching and other effects.
Application Field of 2DB1182Q-13
2DB1182Q-13 is widely used in industrial and commercial electronics.In particular, it is widely used for switching & amplifier application circuit, power switch circuit, rectifier, general-purpose amplifier circuit, voltage limiter circuit and oscillator circuit. Besides, it can also be used in switching power supply, modern audio equipment drive, sound control, sensor circuit, communication system, automobiles and other electronic components. Therefore, due to its multiple application fields, 2DB1182Q-13 is quite popular in the field of electronic engineering.
Working Principle of 2DB1182Q-13
2DB1182Q-13 is composed of two p–n junctions, connects another p-type material as the base region between them to form a closed loop. The two p–n junctions will be closed in the same direction and the three parts will be combined into one device.The mode in which the voltage applied to the input terminal changes the output current is called the transistor action. It is an important feature of the transistor that it can be used as an amplifier device.The amplifying effect of 2DB1182Q-13 can be achieved by changing the size of the base current.
2DB1182Q-13 Maximum Rating
The following are the maximum ratings for the 2DB1182Q-13 transistor: Collector-emitter voltage: 600V ; Collector-Base voltage: 600V; Emitter-Base voltage: 5V; Collector Current: 4A; Power Dissipation: 33W; Operating and storing junction temperature: +150 to -55 degree Celsius.
Conclusion
2DB1182Q-13 is a type of single bipolar junction transistor (BJT). It is widely used in various applications, ranging from switching and amplifier applications to automobiles. Its working principle is to use the current at the base terminal to control the current flow from the collector to the emitter. Besides, it has certain maximum ratings such as Collector-emitter voltage, Collector-Base voltage, etc.
The specific data is subject to PDF, and the above content is for reference
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