2DB1386R-13

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2DB1386R-13 is a single bipolar transistor, specifically, a NPN transistor. The 2DB1386R-13 is a high-voltage, high-current transistor with a maximum continuous collector current of 12A and a maximum collector-emitter voltage of 60V. The 2DB1386R-13 is typically used in switching and linear applications, including output stages and power amplifiers.

The two electrical properties of a transistor which determine its application field are its current gain and maximum power dissipation. The first value, current gain, is usually expressed as beta, hfe, or simply h. This value determines the amount of current that will flow for a given amount of input current. The 2DB1386R-13 has a typical current gain of 140–240. The second value, maximum power dissipation, is usually expressed as Pmax, or simply Pd. This value determines the maximum power that can be safely dissipated by the transistor without damaging it. The 2DB1386R-13 has a maximum power dissipation of 250W.

The working principle of the 2DB1386R-13 relies on what is known as the bipolar transistor effect. This phenomenon was first discovered in 1947 by William Shockley, Walter Brattain, and John Bardeen at AT&T’s Bell Labs. The quirk of this effect is that when two or three pieces of semiconductor material are brought in close proximity, they form what is known as a “junction”. In the case of the 2DB1386R-13, this junction is created by two pieces of silicon that are separated by a thin layer of oxide. When current is applied to one side of the junction, it causes electrons to flow from one side to the other. This current flow is known as “transistor action” and is used to amplify or switch signals.

When wired as an amplifier, the 2DB1386R-13 is connected in a common collector configuration, meaning that the collector is common to both the input and output signal. The output current is dependent upon the current gain of the transistor, which is the ratio of collector current to base current. The voltage gain of the 2DB1386R-13 is also quite high, delaying the reaction of the output signal to changes in the input signal. This amplifying feature makes it well-suited for audio amplifier and power amplifier applications. When wired as a switch, the 2DB1386R-13 can be used to control the amount of current that is allowed to flow through a circuit. This type of transistor switching is common in the automotive industry, where it is used to power things like electric windows, radios, and door locks.

In conclusion, the 2DB1386R-13 single bipolar transistor is well suited for various switching and linear applications, including audio, power, and automotive. Its high current gain and maximum power dissipation ratings make it suitable for most applications, and its reliable performance makes it dependable in a variety of scenarios. The 2DB1386R-13 is a high-quality transistor that is used in countless applications. Its versatile design and reliable performance make it a popular choice for engineers and hobbyists alike.

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